Patents by Inventor Gyu-Wan Choi

Gyu-Wan Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961775
    Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.
    Type: Grant
    Filed: November 8, 2022
    Date of Patent: April 16, 2024
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Gyu Wan Han, Won Bae Bang, Ju Hyung Lee, Min Hwa Chang, Dong Joo Park, Jin Young Khim, Jae Yun Kim, Se Hwan Hong, Seung Jae Yu, Shaun Bowers, Gi Tae Lim, Byoung Woo Cho, Myung Jea Choi, Seul Bee Lee, Sang Goo Kang, Kyung Rok Park
  • Publication number: 20130189563
    Abstract: Provided are: a battery module which not only facilitates the work of serial and/or parallel coupling a plurality of stacked cell cartridges but also improves safety for workers during the coupling work; and a method for assembling battery modules.
    Type: Application
    Filed: March 3, 2011
    Publication date: July 25, 2013
    Inventors: Tae Young Chang, Gyu Wan Choi
  • Publication number: 20120064680
    Abstract: A method of forming a capacitor structure and manufacturing a semiconductor device, the method of forming a capacitor structure including sequentially forming a first mold layer, a supporting layer, a second mold layer, an anti-bowing layer, and a third mold layer on a substrate having a conductive region thereon; partially removing the third mold layer, the anti-bowing layer, the second mold layer, the supporting layer, and the first mold layer to form a first opening exposing the conductive region; forming a lower electrode on a sidewall and bottom of the first opening, the lower electrode being electrically connected to the conductive region; further removing the third mold layer, the anti-bowing layer, and the second mold layer; partially removing the supporting layer to form a supporting layer pattern; removing the first mold layer; and sequentially forming a dielectric layer and upper electrode on the lower electrode and the supporting layer pattern.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 15, 2012
    Inventors: Jung-Min Oh, Bo-Un Yoon, Gyu-Wan Choi, Kun-Tack Lee, Dae-Hyuk Kang, Im-Soo Park, Dong-Seok Lee, Young-Hoo Kim