Abstract: A multiphase converter for reducing the input and output current ripples. The multiphase converter includes a system controller and power devices. Furthermore, the multiphase converter includes an active gate driver integrated circuit (IC) electrically connected to the system controller and the power devices. The active gate driver IC receives signals from the system controller and provides outputs to the power devices based, at least in part, on real-time feedback from the power devices.

Abstract: Improved magnetic field sensing is provided by switching between a Hall effect mode and an inductive mode. The inductive mode is used when the frequency of the magnetic field being sensed is above a frequency threshold. The Hall effect mode is used when the frequency of the magnetic field is below the frequency threshold. The sensor element can be any Hall effect sensor element. In the Hall effect mode, the sensor element is used conventionally, optionally including refinements such as current spinning for more accurate results. In the inductive mode, no current is provided to the sensor element. The resulting transverse sensor voltage is induced by time-variation of the magnetic field, and can be used as a measure of magnetic field strength.

Abstract: An improved gate driver using a microcontroller (uC), a voltage selector (VS), an adjustable voltage regulator (AVR), and an auxiliary current sinking circuit (ACSC) to actively provide selectable drive signals either higher, lower or equal to the basic on voltage and off voltage drive signals for a selected semiconductor device thereby providing an active voltage-mode gate driver for actively speeding up or slowing both the on time and off time transitions of a semiconductor.

Abstract: A high temperature optoelectronic isolator for power electronics operating above 250 degrees Celcius.

Abstract: An improved gate driver using a microcontroller (uC), a voltage selector (VS), an adjustable voltage regulator (AVR), and an auxiliary current sinking circuit (ACSC) to actively provide selectable drive signals either higher, lower or equal to the basic on voltage and off voltage drive signals for a selected semiconductor device thereby providing an active voltage-mode gate driver for actively speeding up or slowing both the on time and off time transitions of a semiconductor.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: A faulted switch isolated replacement path for a power converter is provided using replacement switches connected to an isolated node. The replacement switches can be controlled by normal operating signals. The replacement path is isolated by isolation switches during normal operation. During a fault condition, the isolating switches are activated such that the isolated node is selectively connected to the appropriate power output.

Abstract: A flip-chip wire bondless power device and method for using a two sided contact bare die power device as a single-connection-level power device. The device uses a top pad solder ball array for connecting a top pad electrically connected to the top contact of the bare die power device and a bottom pad solder ball array for connecting a bottom pad that is electrically through an electrically conductive bottom pad connector that is electrically connected to the bottom contact of the bare die power device using an electrically conductive die-attach material, the top pad and bottom pad, and thereby the top pad solder ball array and the bottom pad solder ball array are planar for flip chip mounting. A trench can be formed between the top pad and bottom pad for isolation and insulation purposes. A method of assembling a flip-chip wire bondless power device is also provided.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.

Abstract: A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.

Abstract: The Model Editor (106) makes simulation modeling easier and more intuitive by extracting essential information and presenting it to the user, and by providing tools to investigate simulation and model robustness, in an interactive, graphical environment. The Model Editor (106) includes a Newton step manager as an interactive, graphical tool. During simulation of a model, the Newton step manager captures matrix norms. Any indications of Newton limiting are also captured. The matrix norms are plotted as a function of iteration count, and the iterations at which Newton limiting were encountered are identified. Newton step manager can also be run automatically using a functional dependency analysis.

Abstract: The Model Editor (106) makes simulation modeling easier and more intuitive by extracting essential information and presenting it to the user, and by providing tools to investigate simulation and model robustness, in an interactive, graphical environment. Using the model editor, the user enters relationships or formulas in the equation editor (200), enters symbols in the topology editor (202), and interconnects them (1804). Relationships can be hidden for screen efficiency (1806). Selecting a symbol highlights the corresponding relationships in the equation editor through cross-coupling, and conversely selecting an equation or instance highlights the corresponding symbol in the topology editor (1808). The model editor includes parameter management tools (206) to manage equation parameters. Models or portions thereof that are reused donate the parameter management data to the new model (1810). Following editing and parameter management, the user can perform model robustness and verification.