Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.

Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.

Abstract: A conductor crossing a trench around an electrical component is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown from occurring in the electrical component.

Abstract: Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.

Abstract: In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining suitable resistance and design variability. The emitters are split up into a plurality of emitter portions, each with a separate emitter ballast resistor. The collector and base are correspondingly split up. The transistor is split up into unit cells, each comprising an emitter, a ballast resistor, a base, and a collector, which are respectively connected via respective common leads. This structure may advantageously be realized in a SOI technique, the galvanic isolation enabling unproblematic mixing of digital and analog and power devices in the same chip.

Abstract: An island of material has an insulating trench structure. The trench structure includes a first insulating trench surrounded by a second insulating trench. The trenches are joined together by at least two transverse linking trenches.

Abstract: An optical interface means for non-permanent passive coupling of light between two optically transparent media comprises a support member (3), and at least one shaped body (6) of an optically transparent elastic material supported thereby and adapted to resiliently contact said solid medium or media, said elastic material having a matching refractive index in respect of said media.