Abstract: A semiconductor device includes an integrated circuit die, wherein a layer of photoresist is permanently disposed on and permanently hermetically seals an active circuit area of a top surface of the inductor die. In one embodiment, the semiconductor device includes a lead frame including a conductive pad and a plurality of conductive leads, wherein the die is attached to the conductive pad, and wherein bonding wires bond the leads of the lead frame to bonding pads of the die, and wherein the die and bonding wires are encapsulated in package material. In another embodiment, solder bumps are provided on the bonding pads, and the die is inverted and the solder bumps are attached to corresponding conductors on a printed circuit board.

Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.

Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.