Abstract: A system and a method for handling a system failure are disclosed. The method is adapted for an information handling system having a basic input and output system and a micro-controller. The method includes the following steps: sending, via the micro-controller, a signal; checking, via the micro-controller, whether an acknowledgement is received from the basic input and output system responsive to the signal; and scanning, via the micro-controller, a type of a system failure in response to the acknowledgement being not received.

Abstract: A system and a method for handling a system failure are disclosed. The method is adapted for an information handling system having a basic input and output system and a micro-controller. The method includes the following steps: sending, via the micro-controller, a signal; checking, via the micro-controller, whether an acknowledgement is received from the basic input and output system responsive to the signal; and scanning, via the micro-controller, a type of a system failure in response to the acknowledgement being not received.

Abstract: A waterless seasoning process is described, which waterless seasoning process is suitable for an etching chamber of an etching machine when the etching environment is so bad that etching cannot be performed. A dry cleaning process with a plasma formed by oxygen and hydrogen bromide is performed to restore the etching environment in the etching chamber.

Abstract: A method of fabricating a semiconductor device is described in which an insulation layer is formed over the gate electrode and the substrate. This insulation layer is anisotropically etched away except for a portion surrounding the sidewall of the gate electrode to form a spacer. The tip of the spacer is at the same height as the upper surface of the liner layer and is lower than the upper surface of the gate electrode, therefore, resulting in an increase of the exposed area of the gate electrode surface.

Abstract: The invention describes a method for fabricating an inter-layer dielectric layer. In this method, a plurality of first polysilicon lines, a first inter-layer dielectric layer, and a plurality of second polysilicon lines are formed in sequence on the substrate. A second inter-layer dielectric layer is formed between the plurality of second polysilicon lines and entirely covers the plurality of second polysilicon lines. Afterwards, a spin-on glass layer is formed on the second inter-layer dielectric layer, and then, while using the upper surfaces of the second polysilicon lines as etch end points, the spin-on glass layer and the second inter-layer dielectric layer are etched back to entirely remove the spin-on glass layer and partially remove the second inter-layer dielectric layer over the second polysilicon lines. Subsequently, a cover layer is formed to cover the second polysilicon lines and the remainder of the inter-layer dielectric layer. Finally, an oxide layer is formed to cover the resulting structure.

Abstract: An electronic device made by the method of connecting a circuit member (18) having a plurality of laterally spaced electrically conductive terminals (20) to a substrate (12) including a mounting surface (14) having a plurality of laterally spaced conductive paths (16) wherein the method includes the steps of applying an adhesive (22) including a resin having a twenty to twenty-five percent by weight content of conductive metal particles over the mounting surface (14) of the substrate (12) having the conductive paths (16) wherein the resin is a dielectric preventing conductivity between the spaced metal particles therein and mounting the circuit member (18) on the adhesive (22) while vertically aligning the conductive terminals (20) over preselected ones of the conductive paths (16).

Abstract: An electronic device made by the method of connecting a circuit member (18) having a plurality of laterally spaced electrically conductive terminals (20) to a substrate (12) including a mounting surface (14) having a plurality of laterally spaced conductive paths (16) wherein the method includes the steps of applying an adhesive (22) including a resin having a twenty to twenty-five percent by weight content of conductive metal particles over the mounting surface (14) of the substrate (12) having the conductive paths (16) wherein the resin is a dielectric preventing conductivity between the spaced metal particles therein and mounting the circuit member (18) on the adhesive (22) while vertically aligning the conductive terminals (20) over preselected ones of the conductive paths (16).

Abstract: An electronic device made by the method of connecting a circuit member (18) to a substrate (12) wherein the method includes the steps of applying an adhesive (22) including a resin having a twenty to twenty-five percent by weight content of conductive metal particles over the mounting surface (14) of the substrate (12) wherein the resin is a dielectric preventing conductivity between the spaced metal particles therein and mounting the circuit member (18) on the adhesive (22) while vertically aligning conductive terminals (20) of the circuit member (18) over preselected ones of conductive paths (16) of the substrate (12).