Abstract: A radiation delivery system includes a radiation source to generate a radiation beam to deliver to a target and a multi-leaf collimator (MLC) operatively coupled to the radiation source, wherein the MLC is offset to shift the MLC in a direction relative to a line from the radiation source to a point of interest to cause projections of the radiation beam to be shifted based on the offset.

Abstract: A radiation delivery system includes a radiation source to generate a radiation beam to deliver to a target and a multi-leaf collimator (MLC) operatively coupled to the radiation source, wherein the MLC is offset to shift the MLC in a direction relative to a line from the radiation source to a point of interest to cause projections of the radiation beam to be shifted based on the offset.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: Provided is a foamed dust composition and a method of using the foamed dust composition. The foamed dust composition contains an aqueous foam comprising a foaming agent, a foam stabilizer, water, and a rock dust. The foamed dust composition is sprayed onto coal mine surfaces to prevent coal dust explosion in the event of a fire.

Abstract: Embodiments are directed to a method and resulting structures for forming a semiconductor device having a vertically integrated nanosheet fuse. A nanosheet stack is formed on a substrate. The nanosheet stack includes a semiconductor layer formed between an upper nanosheet and a lower nanosheet. The semiconductor layer is modified such that an etch rate of the modified semiconductor layer is greater than an etch rate of the upper and lower nanosheets when exposed to an etchant. Portions of the modified semiconductor layer are removed to form a cavity between the upper and lower nanosheets and a silicide region is formed in the upper nanosheet.

Abstract: Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.

Abstract: Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.

Abstract: Embodiments are directed to a method and resulting structures for forming a semiconductor device having a vertically integrated nanosheet fuse. A nanosheet stack is formed on a substrate. The nanosheet stack includes a semiconductor layer formed between an upper nanosheet and a lower nanosheet. The semiconductor layer is modified such that an etch rate of the modified semiconductor layer is greater than an etch rate of the upper and lower nanosheets when exposed to an etchant. Portions of the modified semiconductor layer are removed to form a cavity between the upper and lower nanosheets and a silicide region is formed in the upper nanosheet.

Abstract: Embodiments are directed to a method and resulting structures for forming a semiconductor device having a vertically integrated nanosheet fuse. A nanosheet stack is formed on a substrate. The nanosheet stack includes a semiconductor layer formed between an upper nanosheet and a lower nanosheet. The semiconductor layer is modified such that an etch rate of the modified semiconductor layer is greater than an etch rate of the upper and lower nanosheets when exposed to an etchant. Portions of the modified semiconductor layer are removed to form a cavity between the upper and lower nanosheets and a silicide region is formed in the upper nanosheet.

Abstract: Embodiments are directed to a method and resulting structures for forming a semiconductor device having a vertically integrated nanosheet fuse. A nanosheet stack is formed on a substrate. The nanosheet stack includes a semiconductor layer formed between an upper nanosheet and a lower nanosheet. The semiconductor layer is modified such that an etch rate of the modified semiconductor layer is greater than an etch rate of the upper and lower nanosheets when exposed to an etchant. Portions of the modified semiconductor layer are removed to form a cavity between the upper and lower nanosheets and a silicide region is formed in the upper nanosheet.

Abstract: Embodiments are directed to a method and resulting structures for forming a semiconductor device having a vertically integrated nanosheet fuse. A nanosheet stack is formed on a substrate. The nanosheet stack includes a semiconductor layer formed between an upper nanosheet and a lower nanosheet. The semiconductor layer is modified such that an etch rate of the modified semiconductor layer is greater than an etch rate of the upper and lower nanosheets when exposed to an etchant. Portions of the modified semiconductor layer are removed to form a cavity between the upper and lower nanosheets and a silicide region is formed in the upper nanosheet.

Abstract: Disclosed herein are methods for recovering diphosphonite-containing compounds from mixtures comprising organic mononitriles and organic dinitriles, using multistage countercurrent liquid-liquid extraction. Recovery is enhanced with one or more method steps. In a first step, a portion of the heavy phase from the settling section of the first stage is recycled to the settling section of the first stage. In a second step, a portion of the light phase from the settling section of the first stage is recycled to the mixing section of the first stage. In a third step, the first stage takes place in a mixer-settler, a Lewis base is introduced into the settling section of the first stage, and a complex of Lewis acid and Lewis base is formed in this settling section. In a fourth step, a polyamine is added to the first stage.

Abstract: An anti-foaming agent containing (A) an organopolysiloxane and a finely powdered inorganic filler, (B) a polyoxyalkylene group-containing branched chain organopolysiloxane, and (C) an anionic surfactant. This anti-foaming agent exhibits stable anti-foaming performance even at high temperatures that reach, for example, 80QC or under strongly alkaline conditions and produces no aggregates.

Abstract: Disclosed herein are methods for recovering diphosphite-containing compounds from mixtures comprising organic mononitriles and organic dinitriles, using liquid-liquid extraction. Also disclosed are treatments to enhance extractability of the diphosphite-containing compounds.

Abstract: Disclosed herein are methods for recovering diphosphonite-containing compounds from mixtures comprising organic mononitriles and organic dinitriles, using liquid-liquid extraction. Also disclosed are treatments to enhance extractability of the diphosphonite-containing compounds.

Abstract: An improved multi-reaction zone process provides improved nitrile product quality and yield. In a first reaction zone, 1,3-butadiene is reacted with hydrogen cyanide in the presence of a catalyst to produce pentenenitriles comprising 3-pentenenitrile and 2-methyl-3-butenenitrile. In a second reaction zone, 2-methyl-3-butenenitrile, recovered from the first reaction zone, is isomerized to 3-pentenenitrile. In a third reaction zone, 3-pentenenitrile recovered from the first and second reaction zones is reacted with hydrogen cyanide in the presence of a catalyst and a Lewis acid to produce adiponitrile. Unwanted production and build-up of dinitriles, including methylglutaronitrile, in the first reaction zone for the hydrocyanation of 1,3-butadiene is prevented by limiting the flow of Lewis acid into the first reaction zone.

Abstract: Adiponitrile is made by reacting 3-pentenenitrile with hydrogen cyanide. The 3-pentenenitrile is made by reacting 1,3-butadiene with hydrogen cyanide. The catalyst for the reaction of 1,3-butadiene with hydrogen cyanide to make 3-pentenenitrile is recycled. At least a portion of the recycled catalyst is purified by an extraction process, which separates catalyst degradation products and reaction byproducts, such as mononitriles having 9 carbon atoms, from the catalyst.