Abstract: A Quantum Field Noise Source and Secure Information Transfer system for realizing a true random signal generator, without the need for a decipher key. Electrostatically-actuated microelectromechanical beams are disposed above and across a slotline to create parallel-plate cavities. The relationship between the beam-to-slotline distance (d1) and the beam-to-electrode distance (d2) is d1<d2/3. The beams have a mechanical resonance frequency, ?c and are driven by a sinusoidal voltage waveform of peak amplitude Vrf and frequency ?rf, whose DC level is set to a voltage VCntrl and is applied to the beams through a parallel RLC circuit of resonance frequency ?0. An input signal is applied to the slotline that propagates down the slotline and is influenced by the beams. The random vibrations modulate the signal across the slotline to create white noise that is decipherable by a copy apparatus with the same layout, frequencies, beam sizes, and materials.

Abstract: A tunneling accelerometer includes a proof mass that moves laterally with respect to a cap wafer. Either the proof mass or the cap wafer includes a plurality of tunneling tips such that the remaining one of proof mass and the cap wafer includes a corresponding plurality of counter electrodes. The tunneling current flowing between the tunneling tips and the counter electrodes will thus vary as the proof mass laterally displaces in response to an applied acceleration.

Abstract: A nano-electron fluidic logic (NFL) device for controlling launching and propagation of at least one surface plasma wave (SPW) is disclosed. The NFL device comprises a metallic gate patterned with a plurality of terminals at which SPWs may be launched and a plurality of drain terminals a which the SPWs may be detected. A wave guiding structure such as a 2 DEG EF facilitates propagation of the SPW within the structure so as to scatter/steer the SPW in a direction different from a pre-scattering direction. A bias SPW is excited by an application of a control SPW with a momentum vector at an angle to the bias SPW and a control current with a wavevector which scatters the bias SPW in the direction of at least one output SPW, towards a drain terminal. The NFL device is rendered with device speed as a function of SPW propagation velocity.

Abstract: A tunneling accelerometer includes a proof mass that moves laterally with respect to a cap wafer. Either the proof mass or the cap wafer includes a plurality of tunneling tips such that the remaining one of proof mass and the cap wafer includes a corresponding plurality of counter electrodes. The tunneling current flowing between the tunneling tips and the counter electrodes will thus vary as the proof mass laterally displaces in response to an applied acceleration.

Abstract: A tunneling accelerometer includes a proof mass that moves laterally with respect to a cap wafer. Either the proof mass or the cap wafer includes a plurality of tunneling tips such that the remaining one of proof mass and the cap wafer includes a corresponding plurality of counter electrodes. The tunneling current flowing between the tunneling tips and the counter electrodes will thus vary as the proof mass laterally displaces in response to an applied acceleration.

Abstract: A light guide device for steering an input light may include a PBC lattice having a input surface and a first surface. The input surface may receive the input light to cooperate with the first surface, and the PBC lattice may direct the input light to the first surface to output the light from the PBC lattice by a programmable lattice of defect. The PBC lattice may include a aperture adapted to be filled with fluid, and the PBC lattice may include a fluid valves adapted to cooperate with the aperture. The PBC lattice may include a layer of fluid to cooperate with the fluid valve and the aperture, and the PBC lattice may include a second surface for output of the light by reprogramming the lattice of defect. The PBC lattice may include a third surface for output of the light by reprogramming the lattice of defect, and the first surface may be substantially perpendicular to the input surface.

Abstract: A nano-electron fluidic logic (NFL) device for controlling launching and propagation of at least one surface plasma wave (SPW) is disclosed. The NFL device comprises a metallic gate patterned with a plurality of terminals at which SPWs may be launched and a plurality of drain terminals at which the SPWs may be detected. A wave guiding structure such as a 2 DEG EF facilitates propagation of the SPW within the structure so as to scatter/steer the SPW in a direction different from a pre-scattering direction. A bias SPW is excited by an application of a control SPW with a momentum vector at an angle to the bias SPW and a control current with a wavevector which scatters the bias SPW in the direction of at least one output SPW, towards a drain terminal. The NFL device being rendered with device speed as a function of SPW propagation velocity.

Abstract: A micro-electro-mechanical system (MEMS) slotline switch includes a slotline transmission line structure defined on top of substrate, a doubly-anchored conductive beam disposed perpendicular to, and above slotline so that there is a certain spacing between the beam and the slotline, a second conductive contact attached to the beam directly above the slot of the slotline a bottom conductive contacts defined on bottom surface of substrate and forming parallel-plate capacitor with conductive beam, conductive traces defined on the bottom surface of the substrate forming a microstrip-to-slotline transition for coupling signals in microstrip line to the slotline, and beam and bottom conductive contacts being spaced apart, and the beam being continuously movable when a voltage is applied between the beam and the bottom conductive contacts.

Abstract: Micro-Electro-Mechanical System (MEMS) Variable Capacitor Apparatus and Related Methods. According to one embodiment, a MEMS variable capacitor is provided. The variable capacitor can include first and second electrodes being spaced apart, and at least one of the electrodes being movable when a voltage is applied across the first and second electrodes. The variable capacitor can also include a first conductive plate attached to and electrically isolated from the first electrode. Furthermore, the variable capacitor can include a second conductive plate attached to the second electrode and spaced from the first conductive plate for movement of at least one of the plates with respect to the other plate upon application of voltage across the first and second electrodes to change the capacitance between the first and second plates.

Abstract: Micro-Electro-Mechanical System (MEMS) Variable Capacitor Apparatus and Related Methods. According to one embodiment, a MEMS variable capacitor is provided. The variable capacitor can include first and second electrodes being spaced apart, and at least one of the electrodes being movable when a voltage is applied across the first and second electrodes. The variable capacitor can also include a first conductive plate attached to and electrically isolated from the first electrode. Furthermore, the variable capacitor can include a second conductive plate attached to the second electrode and spaced from the first conductive plate for movement of at least one of the plates with respect to the other plate upon application of voltage across the first and second electrodes to change the capacitance between the first and second plates.

Abstract: A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.

Abstract: A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.

Abstract: A redundant microwave system operable to process a microwave signal propagating in a microwave cavity includes a microwave cavity and two microwave processing devices. Each microwave processing device has a transmissive impedance when it is on and a reflective impedance when it is off. There is a separate coupling probe extending from each of the microwave processing devices to locations within the microwave cavity. When a primary one of the microwave processing devices is switched on and the redundant microwave processing device is switched off, its coupling probe reflects energy so that almost all of the energy flows through the primary microwave processing device. If the primary microwave processing device fails and is switched off, its coupling probe reflects energy so that almost all energy flows through the redundant device. No separate active switching device or circuit is used.

Abstract: A microwave microstrip/waveguide transition structure includes a substrate, an elongated microstrip layer residing on a surface of the substrate, and an elongated integral hollow waveguide on the surface of the substrate. The microstrip layer and a side of the hollow waveguide constitute a single continuous piece of metal. The transition structure is fabricated by providing a substrate, depositing a metallic layer on the substrate, and depositing a metallic hollow housing continuous with a portion of a length of the metallic layer. The metallic hollow waveguide bounded by the metallic layer and the metallic hollow housing and having a contained volume therewithin is thereby defined.

Abstract: A sample and hold circuit that is coupled to a control voltage source and a signal source has a sampling bridge coupled in series between a first resonant tunneling diode. The bridge comprises a plurality of diodes. The sampling bridge couples an input voltage signal that is to be sampled to a holding capacitor when the sampling bridge is forward biased. The bridge substantially decouples the input voltage signal from the holding capacitor when the sampling bridge diodes are reversed biased. The resonant tunneling diodes when reversed biased allow the bridge to be isolated from the control voltage source to allow the holding capacitor to float at the sampled value of the input voltage.

Abstract: A resonator tuning system includes an apparatus coupled to a resonator for changing the resonator's resonance frequency. Tuning of the resonator is accomplished by varying the coupling to a capacitor or varactor, rather than by varying the capacitor. An interferometer, such as a Mach-Zender interferometer is coupled to the resonator and changes the resonance of the resonator by applying an actuation voltage to vary the coupling to the resonator. In this way, a resonator may be tuned and maintain high unloaded Q properties while being coupled to a varactor or other load.

Abstract: A bistable micro-electromechanical switch (10) having two parallel plate capacitors (17, 19) spaced a distance from each other on a substrate (12). A transmission line (30), having a detached segment (22), that is movable or the substrate (12), is located on the substrate (12) between the parallel plate capacitors (17, 19). A dielectric beam (24) is attached to the movable transmission line segment (22) and the ends of the dielectric beam (24) protrude into each of the parallel plate capacitors (17, 19). When a voltage (26, 28) is applied to one of the capacitors (17 or 19), the dielectric beam (24) is pulled into the capacitor (17 or 19) and brings the movable transmission line segment (22) with it. As the transmission line segment (22) is moved either into, or out of, alignment with the transmission line (30), a path through the transmission line is either closed, or opened.

Abstract: A launch quasi-optical amplifier including a photonic bandgap crystal, designed to operate within a specific frequency range. The photonic bandgap crystal is populated with active devices that are coupled to the alternate layers, or defects, in the crystal to compensate for the absorption in the alternate layers thereby creating a negative absorption coefficient. The photonic bandgap crystal is operable as an amplifier when the active devices are amplifiers, and as a wave source when the active devices are oscillators.

Abstract: A microelectromechanical (MEM) device includes a substrate and a flexible cantilever beam. The substrate has positioned thereon a first interconnection line separated by a first gap and a second interconnection line separated by a second gap parallel to the first interconnection line. The substrate also has positioned thereon a first and second primary control electrode wherein one of the first and second primary control electrodes is positioned on one side of one of the first and second interconnection lines and the other one is positioned on the other side of the other first and second interconnection lines. The flexible cantilever beam has a top surface and a bottom surface and a beam width slightly larger than the gap widths at the gaps. A flexible anchor is secured to the bottom surface of the beam at a center of the beam and attached to a center of the substrate so as to position the beam orthogonally to the first and second interconnection lines.

Abstract: A microelectromechanical switch having a beam cantilevered from a switch base, a first control electrode, having no path to ground, in contact with the fixed end of the cantilevered beam and a second control electrode, also having no path to ground, mounted to the switch base underneath the cantilevered beam, but not in contact therewith. A contact electrode is located underneath the free end of the cantilevered beam. The first and second control electrodes are manipulated to actively effect both the ON and OFF states of the microelectromechanical switch by forcing the beam in and out of contact with the contact electrode.