Abstract: Disclosed is a fully integrated monolithic optical receiver and a method of manufacturing such a receiver, including the steps of providing a semi-insulating substrate having a major surface, growing an epitaxial layer of a first conductivity type over the major surface, selectively removing the epitaxial layer to establish a detector area defined by the remaining portion of the layer, selectively implanting a relatively heavily doped region of a first conductivity type in the epitaxial layer, selectively implanting a relatively heavily doped region of a second conductivity type in the epitaxial layer and spaced from the implanted region of the first conductivity type, selectively implanting a relatively heavily doped source region of the first conductivity type in the major surface of the substrate, selectively implanting a relatively heavily doped drain region of the first conductivity type in the major surface and spaced from the source region, selectively implanting a gate region of the first conductivity