Patents by Inventor H.H. LIN

H.H. LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210408023
    Abstract: The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard mask layer in a divot formed on a top portion of a polysilicon layer interposed between a first polysilicon gate structure and a second polysilicon gate; depositing a second hard mask layer on the first hard mask layer. The patterning process also includes performing a first etch to remove the second hard mask layer and a portion of the second hard mask layer from the divot, performing a second etch to remove the second hard mask layer from the divot; and performing a third etch to remove the polysilicon layer not covered by the first and second hard mask layers to form a separation between the first polysilicon gate structure and the second polysilicon structure.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Y.J. WU, Chih-Ming LEE, Keng-Ying LIAO, Ping-Pang Hsieh, Su-Yu YEH, H.H. LIN, Y.L. WANG