Abstract: A method and apparatus for performing a semiconductor process wafer drying process, the method provides a semiconductor wafer having a process surface disposed in an enclosed drying space following exposure of the process surface to water; supplying a solvent vapor to the drying space at a predetermined concentration from a solvent vapor source and at least one solvent vapor supply line; determining at least one of a solvent vapor concentration and a solvent vapor temperature in the drying space; and heating in response to the determined solvent concentration at least one of at least a portion of one of the solvent vapor source, the at least one solvent vapor supply line, and at the drying space to alter the solvent vapor concentration in the drying space.

Abstract: A method for fabricating a semiconductor product first provides an embedded semiconductor product comprising: (1) a logic region having formed therein a logic field effect transistor device; (2) a memory region having formed therein a memory field effect transistor device; and (3) a kerf region having formed therein a kerf field effect transistor device. The method also provides for measuring for the embedded semiconductor product a gate electrode linewidth for each of the logic field effect transistor device, the memory field effect transistor device and the kerf field effect transistor device. The measured gate electrode linewidths may be compared among themselves or to specified target values for purposes photoexposure process control.