Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.

Abstract: A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between the SiCr layer and the TiW layer. The SiCr and TiW layers are patterned to form a predetermined SiCr thin film resistor pattern and a TiW resistor contact pattern on the SiCr thin film resistor, and a metallization layer is provided to contact the TiW forming the resistor contact pattern.

Abstract: An electro-mechanical micromachined structure uses bumpers to prevent contact between structures at different potentials. A beam is connected to one or more anchors by flexible suspensions, which permit the beam to move along a predetermined axis relative to one or more plates. The suspension includes at least one bumper positioned so that the bumper will contact another part of the suspension before the beam contacts the plates. The bumper is made from the same material as the suspension, during the same processing step. The bumper is positioned to take advantage of shrinkage or expansion of the beam during processing which forces the bumper closer to its contact point then would otherwise be possible.