Abstract: According to a first aspect, the present disclosure relates to a semiconductor sub-assembly comprising a semiconductor device comprising: a semi-insulating substrate (201); a first section (210) configured to emit light; at least a second section (220) configured to modulate light emitted by said first section (210); wherein said first section (210) and said at least second section (220) are monolithically integrated on said semi-insulating substrate (201) and have a common optical waveguide (205?); said first section (210) forms a first vertical PIN junction with a first electrode (212) and a second electrode (214) on said semi-insulating substrate (201); said second section (220) forms a second vertical PIN junction with a first electrode (222) and a second electrode (224) on said semi-insulating substrate (201); an electric resistance between said first electrode (212) of said first section (210) and said first electrode (222) of said second section (220) is superior to about 50 ohms; and an electric resis

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.

Abstract: This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

Abstract: The general field of the invention is that of tunable semiconductor devices with distributed Bragg grating, and more particularly that of tunable lasers with distributed Bragg grating termed DBRs. The device according to the invention comprises a passive Bragg section comprising a material whose optical index variations are controlled by an injection current, said material of the Bragg section is a strained bulk material, the strain applied to the bulk material being equal to at least 0.1%.