Patents by Inventor Hélène JACQUINOT

Hélène JACQUINOT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955566
    Abstract: An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: April 9, 2024
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Hélène Jacquinot
  • Publication number: 20230037618
    Abstract: An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 9, 2023
    Inventor: Hélène JACQUINOT
  • Publication number: 20220271151
    Abstract: A spin qubit quantum device, comprising: a semiconductor portion comprising a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, and wherein the first gate is not aligned with the second gates.
    Type: Application
    Filed: January 18, 2022
    Publication date: August 25, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Thomas BEDECARRATS, Jean CHARBONNIER, Maud VINET, Hélène JACQUINOT, Yann-Michel NIQUET, Candice THOMAS