Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

Abstract: A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of the first conductivity type laterally delimited by an insulated conductive wall extending from the front surface, Transistors are formed in the second semiconductor layer.

Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.

Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.

Abstract: An image sensor including a first substrate having a first surface intended to be illuminated and a second surface on the side of which is formed a plurality of photodetection areas, said second surface being covered with a stack of interconnect levels including metal layers topped with insulating material, and of a second substrate placed on the insulating material of the last interconnect level, in which are formed vias in contact with connection elements of the interconnect levels, at least one of the interconnect levels including conductive shielding areas aligned with the photodetection areas.

Abstract: A mechanical structure (100) comprises a moving mass (3) suspended by beams (4, 5, 6, 7) from a fixed frame (2). The structure (100) comprises elongation means (23-26) mechanically connected to each of the beams (4, 5, 6, 7). The elongation means is designed such that the stiffness of the beams (4, 5, 6, 7) varies only little during movement of the moving mass. The structure is characterized in that the response of an elongation means is asymmetric when acting in tension and in compression. The structure is thus made insensitive to accelerations along a direction parallel to the suspension direction.

Abstract: Diapason type gyrometers using a micro-mechanical structure of vibrating beams. The gyrometer includes a micro-machined sensitive element with at least two symmetrically positioned excitation beams on each side of and parallel to a sensitive Oy axis of the gyrometer. The two beams are connected at their ends through at least one transverse element fixed in its central part to the sensitive Oy axis, to a frame through an elastic torsion return element acting in opposition to the rotation of the transverse element about the Oy axis. The elastic return elements are sized such that the variation of their resonant natural frequency in torsion with temperature is similar to the variation of the resonant natural frequency in bending of the beams with temperature. Such a device may find particular application in the measurement of the angular velocity of a mobile.

Abstract: A mechanical structure (100) comprises a moving mass (3) suspended by beams (4, 5, 6, 7) from a fixed frame (2). The structure (100) comprises elongation means (23-26) mechanically connected to each of the beams (4, 5, 6, 7). The elongation means is designed such that the stiffness of the beams (4, 5, 6, 7) varies only little during movement of the moving mass. The structure is characterized in that the response of an elongation means is asymmetric when acting in tension and in compression. The structure is thus made insensitive to accelerations along a direction parallel to the suspension direction.