Abstract: Apparatus and techniques for analyzing a capacitance value in an electric motor inverter are disclosed. A processor is coupled to a DC-AC inverter, which includes a capacitor across its terminals and is powered by a battery. The processor performs resistor switching to enable singular, periodic measurement of the capacitance. The measured value is compared with a nominal or beginning of life (BOL) value. An alert may be sent if the capacitance has degraded beyond a threshold. In other aspects, the DC torque ripple envelop is used to measure capacitance. The outcome is compared with the other tests to assess consistency. An inconsistent outcome may identify potential resistor degradation.

Abstract: Systems and methods, and computing platforms for determining a fault in a power system, executing on a controller are disclosed. Exemplary implementations can receive, from the plurality of system control modules, a plurality of power flow directions as measured by the plurality of line current sensors, receive, from the plurality of system control modules, a plurality of voltage measurements based on measurements of a plurality of potential transformers, determine a location of a power fault using the plurality of power flow directions, and determine a phase of the power fault using the plurality of voltage measurements.

Abstract: An electroadhesive clutch device can include a first electrode assembly comprising a first conductive portion that is at least partially covered by a first dielectric insulator, a second electrode assembly comprising a second conductive portion that is at least partially covered by a second dielectric insulator, and an electrical signal generator configured to provide first and second signals to the first and second conductive portions of the electrode assemblies, respectively. The first and second electrode assemblies can be at least partially overlapping and configured to slide relative to each other at respective surfaces that comprise the first and second dielectric insulators.

Abstract: The present disclosure generally relates to underwater user interfaces.

Abstract: A building system including one or more memory devices configured to store instructions that, when executed on one or more processors, cause the one or more processors to collect building device data of a building device, generate a time correlated data stream for a data point, and generate a time correlated reliability data stream for the data point. The building device data includes a plurality of data samples of the data point. The time correlated data stream includes values of the plurality of data samples of the data point. The time correlated reliability data stream includes a plurality of reliability values time correlated to corresponding values of the plurality of data samples of the data point and indicating reliability of the values of the plurality of data samples of the data point.

Abstract: Devices for removing implanted objects from body vessels are provided. A device includes a sheath assembly having a cutting tip. The cutting tip includes a cutting surface that is adapted to cut tissue coupled to an implanted object as the cutting tip rotates. The sheath assembly further includes an outer shield carried outside of the cutting tip. The outer shield includes a distal opening, and the outer shield is translatable relative to the cutting tip from a first position to a second position and vice versa. In the first position the cutting surface of the cutting tip is disposed within the outer shield, and in the second position the cutting tip extends through the distal opening and the cutting surface is at least partially disposed outside of the outer shield.

Abstract: Systems and methods for controlling behavior change in a user. Systems can include a behavior change model management system and a behavior change facilitation system included as part of a behavior change platform. Methods can include selecting a behavior change model based on a behavior-specific behavior change phenotype of a user and applying the behavior change model to control behavior change in the user.

Abstract: An electronic device can include a housing defining an aperture and a display positioned in the aperture. The display and the housing can define an internal volume in which a speaker assembly is positioned. The speaker assembly can include a speaker module and a speaker enclosure in fluid communication, with the speaker enclosure at least partially defining a speaker volume.

Abstract: The present disclosure provides alfalfa plants exhibiting broad spectrum resistance to Race 1, Race 2, and Race 5 anthracnose. Such plants may comprise novel introgressed genomic regions associated with disease resistance from Race 1, Race 2, and Race 5 anthracnose. In certain aspects, compositions, including novel polymorphic markers and methods for producing, breeding, identifying, and selecting plants or germplasm with a disease resistance phenotype are provided. Also provided are alfalfa varieties designated as C0416C4164 and H0415C4114. Provided by the invention are the seeds, plants and derivatives of alfalfa varieties C0416C4164 and H0415C4114. Also provided by the invention are tissue cultures of alfalfa varieties C0416C4164 and H0415C4114, and the plants regenerated therefrom. Still further provided by the invention are methods for producing alfalfa plants by crossing alfalfa variety C0416C4164 or H0415C4114 with itself or another alfalfa variety and plants produced by such methods.

Abstract: Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nodes formed in tiers. And, more particularly, to multiple, alternating silicon germanium (SiGe) and single crystalline silicon (Si) in different thicknesses to form tiers in which to form the horizontal access devices in vertical three-dimensional (3D) memory. The horizontally oriented access devices can have a first source/drain regions and a second source drain regions separated by single crystalline silicon (Si) channel regions. The single crystalline silicon (Si) channel regions can include a dielectric material to provide support structure to the single crystalline channel regions when forming the horizontal access devices in vertical three-dimensional (3D) memory. Horizontally oriented access lines can connect to gate structures opposing the channel regions. Vertical digit lines coupled to the first source/drain regions.

Abstract: Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nodes. The horizontally oriented access devices having a first source/drain regions and a second source drain regions separated by silicon (Si) channel regions. A digit line having a global digit line (GDL) contact is formed in a trench adjacent to the first source/drain regions. In one example, the digit line is electrically isolated from a neighboring digit line at the bottom of the trench. In another example, the digit line is formed continuously along a bottom surface of trench to form shared digit lines between horizontal access devices, in two separate arrays, on opposing second vertical surfaces. The memory cells have horizontally oriented storage nodes coupled to the second source/drain regions and vertical digit lines coupled to the first source/drain regions.

Abstract: An invasive medical device assembly includes an invasive medical device and a hub housing configured to surround a portion of the invasive medical device. The invasive medical device may be a needle or other invasive medical device, and the hub housing may be configured to surround a hub of the invasive medical device. In one aspect, the invasive medical device may include a transducer. The hub housing can include at least one integrated circuit embedded therein that is configured to contact the external surface of the needle to electrically connect the transducer to a power source. The hub housing can be configured to provide an ergonomic handle for a user.

Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.

Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The shielding layers may include shielding structures such as a conductive mesh structure and/or a transparent conductive film. The shielding structures may be actively driven or passively biased. In the active driving scheme, one or more inverting circuits may receive a noise signal from a cathode layer in the display and/or from the shielding structures, invert the received noise signal, and drive the inverted noise signal back onto the shielding structures to prevent any noise from the display from negatively impacting the performance of the touch sensors. In the passive biasing scheme, the shielding structures may be biased to a power supply voltage.

Abstract: The present disclosure relates generally to certain 6-azabenzimidazole compounds, pharmaceutical compositions comprising said compounds, and methods of making and using said compounds and pharmaceutical compositions. The compounds and compositions disclosed herein may be used for the treatment or prevention of diseases, disorders, or infections modifiable by hematopoietic progenitor kinase 1 (HPK1) inhibitors, such as HBV, HIV, cancer, and/or a hyper-proliferative disease.

Abstract: A building system including one or more memory devices configured to store instructions that, when executed on one or more processors, cause the one or more processors to collect building device data of a building device, the building device data comprising a plurality of data samples of a data point and generate a time correlated data stream for the data point, the time correlated data stream comprising values of the plurality of data samples of the data point. The instructions cause the one or more processors to generate a time correlated reliability data stream for the data point, the time correlated reliability data stream comprising a plurality of reliability values indicating reliability of the values of the plurality of data samples of the data point.

Abstract: The present invention relates to a method of improving a mass spectrometer, a module for improving a mass spectrometer and an improved mass spectrometer. The aforementioned method uses machine learning and can greatly reduce the number and timeframe for the elimination of false positives to a couple of hours. Such method can be integrated into a mass spectrometer by inserting a computer module programmed with such method into a mass spectrometer's computer system.

Abstract: A storage operation die collision avoidance system includes a storage subsystem providing a first superblock and a second superblock. A storage operation subsystem is coupled to the storage subsystem and performs first storage operations for the first superblock using a first die in the storage subsystem. The storage operation subsystem then determines second storage operations for performance for the second superblock and, without a fixed die storage operation order, identifies a second die in the storage subsystem that is available to perform the second storage operations for the second superblock while at least some of the first storage operations are performed for the first superblock using the first die in the storage subsystem. The storage operation subsystem then performs the second storage operations for the second superblock using the second die in the storage subsystem.

Abstract: A lateral bipolar junction transistor including an emitter region, base region and collector region laterally orientated over a type IV semiconductor substrate, each of the emitter region, the base region and the collector region being composed of a type III-V semiconductor material. A buried oxide layer is present between the type IV semiconductor substrate and the emitter region, the base region and the collector region. The buried oxide layer having a pedestal aligned with the base region.

Abstract: A system for centralized captioned telephone service (“C-CTS”), which includes a C-CTS system (“C-CTSS”) for providing a transcription service to a user subscribed to the C-CTS during a phone call with a peer; a mobile communications device of the user which includes a first phone number assigned from a carrier of the user; a communications device of the peer which includes a second phone number; and a plurality of caption providers that communicate with the C-CTSS. The first phone number is associated with the C-CTSS and each of the caption providers provides a captioned telephone service. A carrier of the first phone number includes a voice network, a data network, and a database that stores the first phone number of the user which is subscribed to the C-CTS. The C-CTSS includes a database that stores the first phone number of the user.