Abstract: The present invention comprises methods for producing semiconductor devices useful in high temperature applications. The invention is based on using silicon ion implantation to convert a portion of the p-type base layer of magnesium-doped GaN into n-type GaN. The boundary of the n-type GaN within the p-type layer then becomes an n-p diode junction which can function as the emitter-base junction. The present methods utilize ion implantation to convert a portion of the p-type layer to n-type thereby forming an n-p junction having desirable diode characteristics. The invention also includes BJT and HBT devices incorporating the present implanted n-p diode junctions.

Abstract: A single crystal thin film of the compound ZnSiXGe1-XN2 (where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate or silicon with or without an additional GaN buffer layer grown on them. Alternately, a GaN single crystal thin film grown on any substrate can be used. In the case of sapphire, it can be R-plane so that the thin film has its c-axis lying within the thin film or A- or C-plane so that the thin film has its c-axis perpendicular to the substrate. The substrate could also be any substrate with a GaN single crystal thin film deposited on it. ZnSiXGe1-XN2 single crystal thin films can be made by the MOCVD method using suitable precursors, molar injection ratios, and substrate temperatures. It is possible to make various optical, electro-optical or electronic devices with the material, for example, a second harmonic generator emitting blue light.

Abstract: The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip bonding to be used for efficient heat removal, yielding much brighter LEDs and more powerful lasers.

Abstract: A laser treatment device provides an output operating laser beam having a single wavelength which is highly absorbed by tissue of a patient and which beam is non-diverging. The laser treatment device may be a catheter which is inserted into a patient for performing endovascular myocardial revascularization (i.e., creating new channels for blood flow from within the interior of the patient's heart). The use of the highly absorbed wavelength and the non-diverging character of the beam are possible by having a distal laser at a distal end of the catheter. The distal laser is pumped by a source of laser energy supplied by an array of diode lasers and passed along an optical fiber from a proximal end of the catheter.

Abstract: A monolithic integrated optical heterodyne receiver circuit formed on a single chip and a process of its manufacture are disclosed. The heterodyne receiver circuit essentially includes a tunable local oscillator formed on a substrate for generating a first light beam, a first waveguide coplanarly formed on the substrate adjacent to the local oscillator for transmitting the first light beam, a second waveguide formed on top of the first waveguide for receiving and transmitting an information-encoded second light beam, a coupler region sandwiched between the first and second waveguides for mixing the two light beams, and a pair of detectors mounted in electrical series with one another for converting the mixed light beams to a radio frequency signal operating at an intermediate frequency.

Abstract: A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and information transfer, via optical means, between IC's, PC boards and displays in a computer. The method essentially includes electrochemically etching a silicon wafer to form a porous silicon region therein, depositing a transparent semiconductor layer on the porous silicon region, and forming a back contact on the wafer.

Abstract: A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

Abstract: A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.