Abstract: A method comprising forming a coating solution which comprises a matrix precursor material, a porogen material and a solvent, by selecting a polyarylene matrix precursor material which cross-links to form a matrix with a calculated cross-link moeity density of at least 0.003 moles/ml, and reacting the polyarylene matrix precursor material with a porogen which is linear oligomer or polymer which is formed from monomers comprising alkenyl or alkynyl functional monomers, which has reactive end groups and a weight average molecular weight in the range of less than about 5000, where the porogen is present in amounts in the range of about 10 to less than 50 percent by weight based on total weight of porogens and matrix precursor material.

Abstract: A monomer suitable for use in forming low dielectric constant films in semiconductor devices comprising i) two dienophile groups (A-functional groups) attached to a single aromatic ring and ii) a second ring structure comprising two conjugated carbon-to-carbon double bonds and a leaving group L (B-functional group), characterized in that said single aromatic ring is directly covalently attached to one of the double bonded carbons of the B functional group or to a fused aromatic ring containing two such double bonded carbons of the B-functional group, and one A-functional group of one monomer is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second monomer to thereby form a polymer.