Patents by Inventor H. T. Huang

H. T. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9293445
    Abstract: A device is described in one embodiment that includes a micro-electro-mechanical systems (MEMS) device disposed on a first substrate and a semiconductor device disposed on a second substrate. A bond electrically connects the MEMS device and the semiconductor device. The bond includes an interface between a first bonding layer including silicon on the first substrate and a second bonding layer including aluminum on the second substrate. The physical interface between the aluminum and silicon (e.g., amorphous silicon) can provide an electrical connection.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: March 22, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Li-Chen Chu, Hung-Hua Lin, H. T. Huang, Jung-Huei Peng, Yuan-Chih Hsieh, Lan-Lin, Chun-Wen Cheng, Chia-Shiung Tsai
  • Publication number: 20140138853
    Abstract: A device is described in one embodiment that includes a micro-electro-mechanical systems (MEMS) device disposed on a first substrate and a semiconductor device disposed on a second substrate. A bond electrically connects the MEMS device and the semiconductor device. The bond includes an interface between a first bonding layer including silicon on the first substrate and a second bonding layer including aluminum on the second substrate. The physical interface between the aluminum and silicon (e.g., amorphous silicon) can provide an electrical connection.
    Type: Application
    Filed: January 31, 2014
    Publication date: May 22, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Martin Liu, Richard Chu, Hung-Hua LIn, H. T. Huang, Jung-Huei Peng, Yuan-Chih Hsieh, Lan-Lin, Chun-Wen Cheng, Chia-Shiung Tsai
  • Publication number: 20110233621
    Abstract: The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.
    Type: Application
    Filed: March 23, 2010
    Publication date: September 29, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Martin Liu, Richard Chu, Hung-Hua Lin, H. T. Huang, Jung-Huei Peng, Yuan-Chih Hsieh, Lan-Lin Chao, Chun-Wen Cheng, Chia-Shiung Tsai
  • Patent number: D337843
    Type: Grant
    Filed: September 13, 1991
    Date of Patent: July 27, 1993
    Inventor: H. T. Huang
  • Patent number: D345027
    Type: Grant
    Filed: December 3, 1991
    Date of Patent: March 8, 1994
    Inventor: H. T. Huang
  • Patent number: D348536
    Type: Grant
    Filed: October 26, 1992
    Date of Patent: July 5, 1994
    Inventor: H. T. Huang
  • Patent number: D353683
    Type: Grant
    Filed: May 11, 1993
    Date of Patent: December 20, 1994
    Inventor: H. T. Huang
  • Patent number: D382362
    Type: Grant
    Filed: February 23, 1996
    Date of Patent: August 12, 1997
    Inventor: H. T. Huang