Abstract: A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

Abstract: A method of removing ALF defects on a device after pad etching process, comprising the steps of: (a) applying EKC solution substantially comprising hydroxylamine (HDA) to the device for about 30 min; (b) applying an intermediate rinse chemical, such as Isopropyl alcohol (IPA) or N-methyl pyrrolidone (NMP), to the device for about 0.5 min to 3 min; and (c) applying water to the device. The ALF defects are effectively removed in the method of the invention, and the bad wafers can be turned to the good ones. Consequently, the primary cost during the manufacture is greatly decreased.

Abstract: A composition suitable for removing a polymer residue on a substrate in post metal solvent strip process substantially comprises water, alkanolamine and a sugar alcohol, and the amount of water is improved to about 20%. To remove the polymer residue, the composition of the invention is applied on a substrate for about 5 min to 15 min at a temperature ranged from about 60° C. to 70° C. The lifetime of the composition is greatly extended from 12 hours to 48 hours by increasing the amount of water from 15% to 20%.

Abstract: A method for eliminating residual polymers for cleaning etched windows of bonding pads. The invention provides a wafer with etched bonding pad windows that is free of residual polymer. Residual polymers induce an increase in the defect rate of cleaning process and bonding process. The wet stripping process peels Polyimide pieces from the surface of the passivation layer to form residual polymers on the wafer. The present invention utilizes the O2-ashing process to eliminate the residual polymers on the wafer. The present invention not only prevents Al—F formation on the bonding pads but also eliminates the residual polymers on the wafer. Therefore, the present invention may enhance the yield rate of semiconductor manufacturing by reducing the defect rates. The present invention does not increase the cost of the cleaning process but does increase the quality of the semiconductor.

Abstract: A method of removing sidewall polymer fence of the dielectric layer, which is a wet strip process using acidic SC1 and CR solutions, and SC1 solution is applied before CR solution. SC1 solution substantially comprises ammonium hydroxide, sulfuric acid and water for removing sidewall polymer fence, and CR solution substantially comprises sulfuric acid and hydrogen peroxide for removing photo-resist. The key of the wet strip process of the invention is that SC1 solution is applied at a low temperature for reducing the oxide loss. The wet strip process of the invention can completely remove the sidewall polymer fence and reduce the oxide loss of the dielectric layer.