Abstract: A showerhead assembly configured to deliver a plurality of gases into a cyclic deposition chamber comprises a showerhead comprising a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The main inner surface radially surrounds the vertical cavity and is tapered such that a vertical distance from the substrate to the main inner surface decreases in a radially outward direction relative a center of the substrate. The showerhead assembly additionally comprises an injector block assembly disposed over the showerhead for delivering the gases from outside of the cyclic deposition chamber into the cyclic deposition chamber through the vertical cavity. The showerhead assembly further comprises a plurality of gas channels formed in the injector block assembly.

Abstract: The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a thin film deposition system comprises a thin film deposition chamber configured to deposit a thin film. The thin film system additionally comprises a precursor source connected to the thin film deposition chamber by a precursor delivery line, wherein the precursor delivery line comprises a filter connected to the precursor source via a first valve, and a by-pass line connected to the precursor source via a second valve.

Abstract: A temperature-controlled showerhead assembly is configured to deliver a plurality of gases into a cyclic deposition chamber. The showerhead assembly comprises a showerhead body having a cavity formed therethrough and at a central region thereof, wherein the cavity is configured to diffuse or mix the gases prior to introducing the gases into the deposition chamber. The showerhead assembly additionally comprises a network of cooling channels configured to conduct heat away from the showerhead body. The showerhead assembly further comprises a network of heating elements configured to supply heat to the showerhead body, wherein the network of heating elements is disposed closer to the an upper surface of the showerhead body relative to the cooling channels.

Abstract: A measuring device is provided for determining the position of a susceptor in a reactor housing. The measuring device includes a central element, which can be fastened on the susceptor at a predefined location, and a plurality of sensing arms, which protrude from the central element beyond an outer periphery of the susceptor. The sensing arms respectively include a sensing section that can be brought in touching contact with a contact zone. The contact zone is formed by an inner periphery of the reactor housing or a component arranged in the reactor housing. Using the measuring device, the position of a susceptor of a CVD reactor is determined relative to the reactor housing or a component arranged in the reactor housing.

Abstract: The present invention relates to equipment used to manufacture PV cells or modules. In some embodiments, a gas delivery and gas exhaust system are provided for processing a plurality of substrates. The gas delivery and gas exhaust system are designed such that the substrates are exposed in a uniform manner to the gas.

Abstract: The present invention relates apparatus and methods for treating the surfaces of substrates in a furnace to enhance the subsequent deposition of thin films or to enhance the reaction of the surfaces with gas phase components. Exhaust systems and methods of their use allow the exhaust gases to be conveyed to proper gas treatments facilities. Door seal and inert gas purge systems allow the furnace to be operated safely and minimize the reaction of the process gases in the door seal region.

Abstract: The present invention relates to equipment used to manufacture PV cells or modules. In some embodiments, a gas delivery and gas exhaust system are provided for processing a plurality of substrates. The gas delivery and gas exhaust system are designed such that the substrates are exposed in a uniform manner to the gas.