Abstract: A driving method of a display device includes: determining each of a plurality of pixel rows of the display device as one of a motion picture display pixel row and a still image display pixel row by comparing image data of each of the pixel rows in a current frame and in a previous frame; and driving the motion picture display pixel row with a motion picture frequency and driving the still image display pixel row with a still image display frequency, which is lower than or equal to the motion picture frequency, where a plurality of still image display pixel rows are driven with at least two still image display frequencies.

Abstract: A controller for a liquid crystal display includes a data driver and a gate driver. The data driver applies data voltages having different polarities to a first pixel and a second pixel. The gate driver applies different gate-on voltages to a first gate line coupled to the first pixel and a second gate line coupled to the second pixel. The gate-on voltages have at least one of a different width or a different level when at least one of a still image or a moving picture is to be displayed. The different gate-on voltages translate into different pixel charging speeds, which may translate into improvements in the luminance and/or other properties of the display.

Abstract: A method of driving a display panel includes detecting a position of a viewer to output a viewer position detection signal, determining whether the position of the viewer is in a first area or in a second area based on the viewer position detection signal to output a viewer position signal, and driving a unit pixel of the display panel using a plurality of gamma values according to the viewer position signal. The first area is less than a reference distance, and the second area is not less than the reference distance. Thus, side visibility of a display apparatus may be improved.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: A method of driving a display panel includes determining a source voltage level by a vertical portion in a present horizontal line of the display panel based on data of the present horizontal line, the display panel including a plurality of vertical portions extended along a vertical direction and arranged in a horizontal direction (the plurality of vertical portions including a vertical portion), generating correction data of the present horizontal line by the vertical portion utilizing the source voltage level of the present horizontal line determined by the vertical portion, generating a source voltage of the present horizontal line by the vertical portion utilizing the source voltage level of the horizontal line determined by the vertical portion, and driving the display panel by the vertical portion utilizing the correction data and the source voltage of the present horizontal line.

Abstract: A controller controls the driving frequency and voltages for a display device. If image data corresponds to a moving picture, the controller drives a data driver and a gate driver at a moving picture frequency. If image data corresponds to a still image, drives the data driver and the gate driver at a still image frequency lower frequency than the moving picture frequency. When the still image is to be displayed, the signal controller also controls leakage current of a thin film transistor of a pixel based on a representative value of the image data, such that positive leakage current applied for a positive data voltage is equal to negative leakage current applied for a negative data voltage.

Abstract: Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

Abstract: A tiled display device includes a first display device including a first display panel configured to sense a touch thereon and display an image signal, and a first controller configured to control the first display panel and transmit a reference signal wirelessly, and a second display device including a second display panel configured to sense a touch thereon and display the image signal, and a second controller configured to control the second display panel and transmit a first ACK signal to the first controller after receiving the reference signal, in which the first controller is configured to determine a first latency time of the second display device by using the reference signal and the first ACK signal and synchronize touch information of the first and second display devices according to the first latency time.

Abstract: High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: A display device includes a display panel, a data driver, a gate driver, and a signal controller. The display panel includes a pixel connected to the gate and data lines, and the pixel includes a liquid crystal capacitor. The signal controller obtains compensation data and normal data based on input data for a still image. The signal controller apples the compensation data and normal data to the pixel during different periods of a frame. The compensation data has a value that reduces a difference of operation characteristics of liquid crystal molecules in the liquid crystal capacitor when a data voltage for the display panel changes between different polarities.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

Abstract: A controller controls the driving frequency and voltages for a display device. If image data corresponds to a moving picture, the controller drives a data driver and a gate driver at a moving picture frequency. If image data corresponds to a still image, drives the data driver and the gate driver at a still image frequency lower frequency than the moving picture frequency. When the still image is to be displayed, the signal controller also controls leakage current of a thin film transistor of a pixel based on a representative value of the image data, such that positive leakage current applied for a positive data voltage is equal to negative leakage current applied for a negative data voltage.

Abstract: High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

Abstract: The present invention relates to a mapping system that searches for locator information for an identifier by use of an autonomous system number (ASN) and a bloom filter (BF), a method for registering identifier/locator information in the mapping system and a method for searching for the locator information for the identifier in the mapping system. The system for mapping an identifier with a locator based on a bloom filter includes: bloom filter servers (BFSs) connected with one another in a tree structure and an identifier/locator mapping table associated with each of leaf BFSs located at a lower end of the tree structure. Each of the leaf BFSs includes a bloom filter indicating identifier information that is stored in the identifier/locator mapping table associated with the leaf BFS, and each of remaining BFS, except for the leaf BFSs, includes a bloom filter for a child BFS.

Abstract: A display panel driving apparatus includes a first switching element and a second switching element. The first switching element applies first pixel data to a first pixel connected with a first data line of a display panel during a first sub frame period. The first switching element is connected with a data channel of a data driving part. The second switching element applies second pixel data having a level higher than a level of the first pixel data to a second pixel connected with a second data line of the display panel during a second sub frame period. The second switching element is connected with the data channel. Thus, display quality of a display apparatus may be enhanced.

Abstract: Provided is a method of detecting a packet error of a return link performed in a satellite communication apparatus receiving a packet through the return link. The method includes generating a first return link packet combination by assembling at least one fragmented packet received through the return link, and determining an error of the packet using at least one piece of information among fragmentation information on at least one second return link packet received after the first return link packet combination is generated, whether or not the first return link packet combination is complete, and packet process state information. Accordingly, it is possible to minimize packet loss caused by a reassembly error of a received packet.