Patents by Inventor Ha-Jin Lim
Ha-Jin Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11257857Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.Type: GrantFiled: October 17, 2019Date of Patent: February 22, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Sung Hur, Jin Gyun Kim, Kook Tae Kim, Young Bin Lee, Ha Jin Lim, Taek Soo Jeon, Soo Jin Hong
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Patent number: 11183525Abstract: An image sensor includes a substrate including a plurality of unit pixels, a stack structure on the substrate, and a grid pattern between ones of the plurality of unit pixels on the stack structure. The grid pattern includes a lower grid pattern and an upper grid pattern on the lower grid pattern, the lower grid pattern including lanthanum oxide (LaO), amorphous silicon (a-Si), or polysilicon (poly-Si) and the upper grid pattern including a conductive material.Type: GrantFiled: May 2, 2019Date of Patent: November 23, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: Ha Jin Lim
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Patent number: 11152415Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.Type: GrantFiled: July 9, 2019Date of Patent: October 19, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha-Jin Lim, Kook-Tae Kim, Jong-Min Jeon, Jae-Sung Hur, Hye-Ri Hong
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Patent number: 10854677Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.Type: GrantFiled: September 10, 2019Date of Patent: December 1, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Taek Soo Jeon, Kee Won Kim, Sang Hoon Uhm, Ki Joong Yoon, Ha Jin Lim
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Publication number: 20200243608Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.Type: ApplicationFiled: September 10, 2019Publication date: July 30, 2020Inventors: Taek Soo JEON, Kee Won KIM, Sang Hoon UHM, Ki Joong YOON, Ha Jin LIM
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Publication number: 20200219911Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.Type: ApplicationFiled: October 17, 2019Publication date: July 9, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jae Sung HUR, Jin Gyun KIM, Kook Tae KIM, Young Bin LEE, Ha Jin LIM, Taek Soo JEON, Soo Jin HONG
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Publication number: 20200127025Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.Type: ApplicationFiled: July 9, 2019Publication date: April 23, 2020Inventors: Ha-Jin LIM, Kook-Tae KIM, Jong-Min JEON, Jae-Sung HUR, Hye-Ri HONG
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Publication number: 20200119072Abstract: An image sensor includes a substrate including a plurality of unit pixels, a stack structure on the substrate, and a grid pattern between ones of the plurality of unit pixels on the stack structure. The grid pattern includes a lower grid pattern and an upper grid pattern on the lower grid pattern, the lower grid pattern including lanthanum oxide (LaO), amorphous silicon (a-Si), or polysilicon (poly-Si) and the upper grid pattern including a conductive material.Type: ApplicationFiled: May 2, 2019Publication date: April 16, 2020Inventor: Ha Jin Lim
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Patent number: 10312341Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.Type: GrantFiled: November 28, 2017Date of Patent: June 4, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha-jin Lim, Gi-gwan Park, Weon-hong Kim
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Patent number: 10276694Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.Type: GrantFiled: October 27, 2016Date of Patent: April 30, 2019Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB FoundationInventors: Ha-Jin Lim, Hyeong-Joon Kim, Nae-In Lee
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Publication number: 20180090585Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.Type: ApplicationFiled: November 28, 2017Publication date: March 29, 2018Inventors: Ha-jin LIM, Gi-gwan PARK, Weon-hong KIM
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Patent number: 9859392Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.Type: GrantFiled: September 19, 2016Date of Patent: January 2, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ha-jin Lim, Gi-gwan Park, Weon-hong Kim
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Patent number: 9728463Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.Type: GrantFiled: July 13, 2016Date of Patent: August 8, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Ha-jin Lim, Gi-gwan Park, Sang-yub Ie, Jong-han Lee, Jeong-hyuk Yim, Hye-ri Hong
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Publication number: 20170084711Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.Type: ApplicationFiled: September 19, 2016Publication date: March 23, 2017Inventors: Ha-jin LIM, Gi-gwan PARK, Weon-hong KIM
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Publication number: 20170062211Abstract: Methods of manufacturing a semiconductor device are provided. The methods may include forming a fin-type active region protruding from a substrate and forming a gate insulating film covering a top surface and both sidewalls of the fin-type active region. The gate insulating film may include a high-k dielectric film. The methods may also include forming a metal-containing layer on the gate insulating film, forming a silicon capping layer containing hydrogen atoms on the metal-containing layer, removing a portion of the hydrogen atoms contained in the silicon capping layer, removing the silicon capping layer and at least a portion of the metal-containing layer, and forming a gate electrode on the gate insulating film. The gate electrode may cover the top surface and the both sidewalls of the fin-type active region.Type: ApplicationFiled: July 13, 2016Publication date: March 2, 2017Inventors: Ha-jin LIM, Gi-gwan PARK, Sang-yub IE, Jong-han LEE, Jeong-hyuk YIM, Hye-ri HONG
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Publication number: 20170047433Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.Type: ApplicationFiled: October 27, 2016Publication date: February 16, 2017Applicant: Seoul National University R&DB FoundationInventors: Ha-Jin Lim, Hyeong-Joon Kim, Nae-In Lee
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Patent number: 9515186Abstract: A semiconductor device includes a semiconductor substrate including a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate 5 structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.Type: GrantFiled: January 22, 2015Date of Patent: December 6, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Ha-Jin Lim, Hyeong-Joon Kim, Nae-In Lee
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Publication number: 20150206974Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.Type: ApplicationFiled: January 22, 2015Publication date: July 23, 2015Inventors: Ha-Jin Lim, Hyeong-Joon Kim, Nae-In Lee
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Patent number: 9023718Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.Type: GrantFiled: January 28, 2014Date of Patent: May 5, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Ho Do, Ha-Jin Lim, Weon-Hong Kim, Hoi-Sung Chung, Moon-Kyun Song, Dae-Kwon Joo
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Patent number: 8975171Abstract: Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.Type: GrantFiled: June 28, 2013Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Ha-Jin Lim, Weon-Hong Kim