Abstract: A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract: The present invention provides an apparatus for manufacturing a carbon nano-tube tip comprising an AC/DC voltage supply, a metallic or semiconductor tip, an amperemeter, and a metallic vessel connected to the tip and the amperemter, wherein the metallic vessel is used as the electrode and define a groove therein filled with a carbon nano-tube solution. The present invention also provides a method for manufacturing a carbon nano-tube tip wherein carbon nano-tubes dispersed in a solvent are attached by electrophoresis to the end of a metal tip or semiconductor tip by using as an electrode a metallic vessel having a groove therein.

Abstract: The present invention provides an apparatus for manufacturing a carbon nano-tube tip comprising an AC/DC voltage supply, a metallic or semiconductor tip, an amperemeter, and a metallic vessel connected to the tip and the amperemter, wherein the metallic vessel is used as the electrode and define a groove therein filled with a carbon nano-tube solution. The present invention also provides a method for manufacturing a carbon nano-tube tip wherein carbon nano-tubes dispersed in a solvent are attached by electrophoresis to the end of a metal tip or semiconductor tip by using as an electrode a metallic vessel having a groove therein.