Abstract: A color conversion substrate and a display device are provided. The color conversion substrate includes a base substrate, a first color filter and a second color filter disposed on a surface of the base substrate, a first partition layer disposed between the first color filter and the second color filter, a second partition layer disposed on the first partition layer, a first wavelength conversion pattern disposed on the first color filter and a second wavelength conversion pattern disposed on the second color filter, wherein the first partition layer includes a first lower surface disposed on the first color filter and a second lower surface disposed on the second color filter.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel pattern extending in a first direction; a gate pattern on the substrate, the gate pattern extending in a second direction crossing the first direction and surrounding the channel pattern; and an interface layer between the channel pattern and the gate pattern, the interface layer being formed on at least one surface of an upper surface and a lower surface of the channel pattern.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel pattern extending in a first direction; a gate pattern on the substrate, the gate pattern extending in a second direction crossing the first direction and surrounding the channel pattern; and an interface layer between the channel pattern and the gate pattern, the interface layer being formed on at least one surface of an upper surface and a lower surface of the channel pattern.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor includes preparing a substrate on which a first region and a second region are defined, forming a first active fin and a second active fin in the first and second regions, respectively, forming a first gate structure and a second gate structure on the substrate in a direction that crosses the first and second active fins, forming a first recess in the first active fin that is adjacent to one side surface of the first gate structure, forming a first epitaxial layer in the first recess, forming a first silicide layer on the first epitaxial layer, forming a second recess in the second active fin that is adjacent to one side surface of the second gate structure, and forming a second silicide layer in the second recess, wherein the second silicide layer includes nickel (Ni) and platinum (Pt).

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a gate pattern which intersects a fin-type active pattern protruding upward from a device isolation layer. A first blocking pattern is formed on a portion of the fin-type active pattern, which does not overlap the gate pattern. Side surfaces of the portion of the fin-type active pattern are exposed. A semiconductor pattern is formed on the exposed side surfaces of the portion of the fin-type active pattern after the forming of the first blocking pattern.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a gate pattern which intersects a fin-type active pattern protruding upward from a device isolation layer. A first blocking pattern is formed on a portion of the fin-type active pattern, which does not overlap the gate pattern. Side surfaces of the portion of the fin-type active pattern are exposed. A semiconductor pattern is formed on the exposed side surfaces of the portion of the fin-type active pattern after the forming of the first blocking pattern.