Abstract: A computer controlled system for real-time control of semiconductor wafer fabrication process uses a multi-point, real-time, non-invasive, in-situ pyrometry-based temperature sensor with emissivity compensation to produce semiconductor wafer reflectance, transmittance, and radiant heat energy measurements. The temperature values that the sensor determines are true temperatures for various points on the wafer. The process control computer stores surface roughness values for the semiconductor wafer being examined. The surface roughness values are produced by surface roughness sensor that makes non-invasive and in-situ measurements. The surface roughness sensor performs roughness measurements of the semiconductor wafer based on coherent reflectance and scatter reflectance of the wafer. Based on surface roughness measurements, the process control computer can use the real-time, in-situ measurements of the multi-point pyrometry-based sensor to obtain real-time measurements of time wafer temperature distribution.

Abstract: A chilling system (12) has a container (20) filled with a coolant (22). A pipe (16) traverses within the container (20) and the coolant (22) to a housing (18). Fluid flows within the pipe (16) and becomes chilled through the pipe (16) upon entering the container (20) and the coolant (22). The chilled fluid enters the housing (18) chilling the housing (18) through the pipe (16). In turn, semiconductor substrate (19) in contact with the housing (18) also is chilled.

Abstract: A thin reflective cylindrical baffle [20] in a radiant lamp heater is provided in the space below a plurality of heating bulbs [2,4,6] (arranged in a center position and around a middle and outer ring) and above a quartz window [12]. The baffle diameter is such that it fits within the annular space between the middle [4] and outer [6]ring of bulbs. The baffle which blocks a predetermined amount of light generated by the lamp bulbs [20] allows improved controllability of wafer temperature profile--for a wafer heated by a radiant lamp heater.

Abstract: A fiber-optic network for communicating non-invasive, real-time, in-situ semiconductor wafer radiance and emissivity measurements. The fiber-optic network includes a plurality of optical fibers, a plurality of fiber-optic bundles, and a chopper multiplexer. The fiber-optic bundle provides for the simultaneous transmission and receipt of coherent infrared light energy and radiant heat energy from a semiconductor wafer within a fabrication reactor. The fiber-optic bundles are designed to be sufficiently small to fit within hollow light pipe in a lamp module that directs optical heating energy to the wafer. This substantially eliminates measurement error that the lamp module generates in known measurement devices. Use of optical fibers for transmitting and receiving laser energy and wafer radiance permits precision placement of the fiber-optic bundles to measure multiple temperatures on the semiconductor wafer surface.

Abstract: In a RTP reactor where wafer temperature is measured by a pyrometer assembly (32), a pyrometer assembly (50) is further provided to measure the temperature of the quartz window (30) that is situated between the wafer pyrometer assembly (32) and the wafer (16) that is being processed. During the calibration procedure (100, 120) where a thermocouple wafer is used, the measurements from the wafer pyrometer assembly (32) and the window pyrometer assembly (50) are calibrated, and pyrometer measurements and thermocouple measurements are collected and compiled into calibration tables. During actual RTP reactor operation, the data from the calibration tables and current wafer and window pyrometer measurements are used to compute corrected wafer temperature(s). The corrected wafer temperature(s) is/are then used to control the intensities of the heating lamps according to the wafer processing heating schedule.

Abstract: A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22).

Abstract: A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22).