Abstract: The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

Abstract: A photodiode including a detection portion made of a first germanium-based crystalline semiconductor material, including a first doped region, a second doped region, and an intermediate region; an interposed portion, in contact with the first doped region, made of a crystalline semiconductor material having a natural lattice parameter equal, to within 1%, to a natural lattice parameter of the first semiconductor material, and a bandgap energy at least 0.5 eV higher than that of the first semiconductor material.

Abstract: A planar photodiode including a main layer including an n-doped first region, a p-doped second region, and an intermediate region, and also a p-doped peripheral lateral portion. It also includes a peripheral intermediate portion, made of an alternation of monocrystalline thin layers of silicon-germanium and germanium, located on the first face, and extending between and at a non-zero distance from the doped first region and from the peripheral lateral portion so as to surround the doped first region in a main plane.

Abstract: A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.

Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.

Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.