Abstract: A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.

Abstract: A CMOS image sensor includes: a plurality of CDS/PGAs (correlating double sampling/programmable gain amplifiers) for processing output signals of pixels corresponding to same colors on different paths; and an offset difference removing part for removing offset difference that occurs when the same color signals are processed on the different paths, wherein the offset difference removing part includes: a dummy pixel array where light is shielded; a unit for reading signals of the dummy pixel array through the CDS/PGAs and storing average offset values for each path; and a signal synthesizing unit for synthesizing the average offset values and signals of an effective pixel array, which are read through the respective CDS/PGAs, and outputting signals of which offset difference is removed.

Abstract: A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.

Abstract: A CMOS image sensor includes: a plurality of CDS/PGAs (correlating double sampling/programmable gain amplifiers) for processing output signals of pixels corresponding to same colors on different paths; and an offset difference removing part for removing offset difference that occurs when the same color signals are processed on the different paths, wherein the offset difference removing part includes: a dummy pixel array where light is shielded; a unit for reading signals of the dummy pixel array through the CDS/PGAs and storing average offset values for each path; and a signal synthesizing unit for synthesizing the average offset values and signals of an effective pixel array, which are read through the respective CDS/PGAs, and outputting signals of which offset difference is removed.

Abstract: A CMOS image sensor includes: a plurality of CDS/PGAs (correlating double sampling/programmable gain amplifiers) for processing output signals of pixels corresponding to same colors on different paths; and an offset difference removing part for removing offset difference that occurs when the same color signals are processed on the different paths, wherein the offset difference removing part includes: a dummy pixel array where light is shielded; a unit for reading signals of the dummy pixel array through the CDS/PGAs and storing average offset values for each path; and a signal synthesizing unit for synthesizing the average offset values and signals of an effective pixel array, which are read through the respective CDS/PGAs, and outputting signals of which offset difference is removed.

Abstract: Disclosed herein is a CMOS image sensor for improving an image quality by removing an offset noise occurred in a path difference. The CMOS image sensor includes a pixel array including a plurality of a first pixel and a second pixel; a first analog data bus and a second analog data bus for transferring a first pixel data and a second pixel data, each generated from the first pixel and the second pixel; a first analog signal processing unit and a second analog signal processing unit, each for amplifying an inputted pixel data to extract a pure pixel data; and a swapping unit for swapping the first pixel data and the second pixel data to thereby delivery each of first and second swapped pixel data into each of the first and the second analog signal processing unit.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor capable of performing an analog correlated double sampling method is provided. The CMOS image sensor includes an image capturing unit for capturing an analog signal corresponding to an image of a subject; an analog-digital converting unit for converting the analog signal into a digital signal by using a ramp signal decreasing in a fixed slope according to a reference clock; a ramp signal generation unit for providing the ramp signal to the analog-digital converter; and a control unit for providing said units with control signals and outputting data to the outside through an interface.

Abstract: A reference voltage and reference current generator supplies a reference voltage and a reference current, both having stable levels regardless of temperature variation. The reference voltage and reference current generator includes a reference voltage generating unit, a first current mirror, a temperature compensation MOS transistor and a second current mirror. The reference voltage generating unit outputs a reference voltage having a stable level regardless of temperature variation and process variation by using junction voltage characteristic and thermal voltage characteristic of a bipolar transistor, and supplies an inner current corresponding to the thermal voltage characteristic. The first current mirror supplies a first current by mirroring the inner current. The temperature compensation MOS transistor supplies a second current corresponding to the reference voltage through the source-drain stage.

Abstract: Disclosed herein is a CMOS image sensor for improving an image quality by removing an offset noise occurred in a path difference. The CMOS image sensor includes a pixel array including a plurality of a first pixel and a second pixel; a first analog data bus and a second analog data bus for transferring a first pixel data and a second pixel data, each generated from the first pixel and the second pixel; a first analog signal processing unit and a second analog signal processing unit, each for amplifying an inputted pixel data to extract a pure pixel data; and a swapping unit for swapping the first pixel data and the second pixel data to thereby delivery each of first and second swapped pixel data into each of the first and the second analog signal processing unit.

Abstract: A reference voltage and reference current generator supplies a reference voltage and a reference current, both having stable levels regardless of temperature variation. The reference voltage and reference current generator includes a reference voltage generating unit, a first current mirror, a temperature compensation MOS transistor and a second current mirror. The reference voltage generating unit outputs a reference voltage having a stable level regardless of temperature variation and process variation by using junction voltage characteristic and thermal voltage characteristic of a bipolar transistor, and supplies an inner current corresponding to the thermal voltage characteristic. The first current mirror supplies a first current by mirroring the inner current. The temperature compensation MOS transistor supplies a second current corresponding to the reference voltage through the source-drain stage.

Abstract: A CMOS image sensor includes: a plurality of CDS/PGAs (correlating double sampling/programmable gain amplifiers) for processing output signals of pixels corresponding to same colors on different paths; and an offset difference removing part for removing offset difference that occurs when the same color signals are processed on the different paths, wherein the offset difference removing part includes: a dummy pixel array where light is shielded; a unit for reading signals of the dummy pixel array through the CDS/PGAs and storing average offset values for each path; and a signal synthesizing unit for synthesizing the average offset values and signals of an effective pixel array, which are read through the respective CDS/PGAs, and outputting signals of which offset difference is removed.

Abstract: A current to voltage amplifier in accordance with the present invention includes a current to voltage amplifier for receiving a sensor input to thereby output an amplified voltage corresponding to the sensor input including a bias current provider for providing a bias current, an input block for flowing a sensor current based on the sensor input, a first diode-connected MOS transistor for receiving the bias current from the bias current provider and providing the sensor current to the input block, and a first MOS transistor for flowing a remnant current subtracting the sensor current from the bias current, wherein the amplified voltage is corresponded to the current.

Abstract: A CMOS image sensor is provided. In the CMOS image sensor, a pixel array has a plurality of first color pixels, a plurality of second color pixels and a plurality of third color pixels, which are arranged in matrix form. A CDS (correlated double sampling) part has CDS circuits to receive output signals of the pixels, one CDS circuit per column being provided. A plurality of analog data buses receive divided output signal of the CDS circuits. An ASP (analog signal processor) is connected to the plurality of analog data buses.