Patents by Inventor Hae C. Yang

Hae C. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5637884
    Abstract: A thin film transistor includes a first active layer formed on a substrate; a gate electrode formed on a center portion of the first active layer and having a lower side connected to the center portion of the first active layer; a second active layer electrically connected to the first active layer and formed on lateral sides and on an upper side of the gate electrode; and impurity regions formed at opposing lateral sides of the gate electrode.
    Type: Grant
    Filed: April 17, 1996
    Date of Patent: June 10, 1997
    Assignee: LG Semicon Co., Ltd.
    Inventor: Hae C. Yang