Abstract: An apparatus and method for setting touch sensitivity in a portable terminal are provided. The method includes activating a touch screen function of a touch pad when a display unit is activated in a standby mode of the portable terminal, displaying a menu screen for conducting a current mode on the display unit, switching the menu screen to a touch sensitivity mode and displaying touch sensitivity levels when the touch sensitivity mode is selected as the current mode, setting sensitivity of the touch pad according to one of the touch sensitivity levels selected by the user and storing the set sensitivity of the touch pad. Advantageously, the user can conveniently use the touch pad, the sensitivity of which is set as desired by the user.

Abstract: A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor substrate. A dielectric layer formed over the lower electrodes, and an upper electrode formed over the dielectric layer. The plurality of lower electrodes are insulated from each other either by an insulating layer having pores of a low dielectric constant, or by an air gap.

Abstract: A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor substrate. A dielectric layer formed over the lower electrodes, and an upper electrode formed over the dielectric layer. The plurality of lower electrodes are insulated from each other either by an insulating layer having pores of a low dielectric constant, or by an air gap.

Abstract: A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor substrate. A dielectric layer formed over the lower electrodes, and an upper electrode formed over the dielectric layer. The plurality of lower electrodes are insulated from each other either by an insulating layer having pores of a low dielectric constant, or by an air gap.

Abstract: An electron beam irradiating apparatus adopting a cathode plate including a non-metal conductive material. The electron beam irradiating apparatus includes a chamber having an opening at the top thereof, a cathode plate disposed to cover the opening of the chamber, a susceptor disposed on the inner bottom surface of the chamber, a grid plate disposed between the cathode plate and the susceptor, and a gas injection ring disposed below the grid plate. The cathode plate and the chamber are electrically insulated from each other, and the grid plate is electrically insulated from the chamber and the cathode plate. The cathode plate may be a single plate formed of the non-metal conductive material alone or a double cathode plate in which at least a lower surface thereof, facing the bottom surface of the chamber, is formed of a non-metal conductive material.

Abstract: A method for forming a microelectronic device includes the steps of forming a spin-on-glass layer on a microelectronic substrate, and forming a capping layer on the spin-on-glass layer opposite the substrate. A masking layer is formed on the capping layer opposite the substrate wherein the masking layer exposes portions of the capping layer and the spin-on-glass layer. The exposed portions of said capping layer and the spin-on-glass layer are etched using the masking layer as an etch mask to thereby form a contact hole through the capping layer and the spin-on-glass layer wherein protruding edge portions of the capping layer extend beyond the spin-on-glass layer adjacent the contact hole. The mask layer is removed, and the protruding edge portions of the capping layer are removed from adjacent the contact hole.

Abstract: A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500.degree. C. for a predetermined time, using an electron beam radiator, to densify the layer.

Abstract: An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.

Abstract: A method for forming an insulating layer for a microelectronic device includes the steps of forming a conductive pattern on a surface of a microelectronic substrate, and forming a spin-on-glass layer on the surface of the microelectronic substrate covering the conductive pattern. The spin-on-glass layer is baked at a temperature in the range of 400.degree. C. to 750.degree. C., and a moisture blocking layer is formed on the baked spin-on-glass layer. By reducing moisture absorbed from the air into the spin-on-glass layer, a relatively low etch rate and a relatively low dielectric constant can be maintained for the spin-on-glass layer. Related structures are also discussed.