Abstract: An organometallic complex that increases an energy band gap between HOMO and triplet MLCT states, and enables highly efficient phospholuminescence and can be used for an organic electroluminescent device. The organometallic complex, which is suitably used for forming an organic layer of the organic electroluminescent device, provides a luminescence maximum emission in the wavelength range of 400-650 nm, and induces white electroluminescence when combined with green or red luminescent materials.

Abstract: Provided are binuclear organometallic complexes enabling highly efficient phospholuminescence and an organic electroluminescent device using the same. The binuclear organometallic complexes, which are suitably used for forming an organic layer of the organic electroluminescent device, provides maximum luminescence emission in the wavelength range of 400-650 nm, and induces white electroluminescence when combined with green or red luminescent materials.

Abstract: An organometallic complex which includes a carboxylic acid as an ancillary ligand, and an organic electroluminescent device employing the same. The organometallic complex is useful as a phosphorescence dopant material of an organic electroluminescent device due to its high luminosity in the range of the blue wavelengths.

Abstract: The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

Abstract: An organometallic precursor mixture for forming a metal alloy pattern and a method of forming the metal alloy pattern using the same, wherein the metal alloy pattern having improved adhesive force to a substrate, heat resistance, and resistance to atmospheric corrosion can be readily formed using the organometallic precursor mixture by and exposing step without using a separate photosensitive resin.