Abstract: A liquid crystal display includes: a display panel; and a color conversion layer positioned on the display panel, wherein the color conversion layer includes a scattering layer including a color conversion media layer and scatterers.

Abstract: Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.

Abstract: There are provided a semiconductor memory and an operating method thereof. The semiconductor memory includes: a plurality of memory blocks each including a plurality of select transistors and a plurality of memory cells; a peripheral circuit for performing a general operation including a program operation, a read operation, and an erase operation on the plurality of memory blocks; and a control logic for controlling the peripheral circuit to operate in a heating mode in which the peripheral circuit applies heat to the plurality of memory blocks.

Abstract: Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.

Abstract: A method for manufacturing a battery module includes accommodating a battery cell assembly having at least one battery cell in a module case, and injecting a thermally conductive adhesive through at least one injection hole provided in a bottom portion of the module case so that the module case is coated with the thermally conductive adhesive.

Abstract: The present invention relates to a use of a recombinant protein in which an interferon-beta protein and an antibody binding to a HER2 antigen are fused for the purpose of treating cancer patients of which the HER2 expression level is IHC 1+ or higher. The recombinant protein can exhibit efficacy better than conventional antibody therapeutic agents through cancer-specific anti-cancer immune responses in patients, thereby being used for more patients, and thus is effectively usable as a novel agent for treating cancer.

Abstract: A suspension system for a vehicle includes a spring pad coupled to a spring and configured to support the spring connecting a suspension arm and a vehicle body member of the vehicle, where the spring pad includes: a seat part coupled to an end of the spring; a guide part configured to guide upward and downward movements of the seat part; and an elastic part configured to connect the seat part and the guide part and having a length that varies when the seat part moves. In particular, the spring is consistently supported by being coupled to the seat part of the spring pad even in a situation in which an additional rebound further occurs in a full-rebound situation and the spring deviates from a range in which the spring can be extended, thus preventing withdrawal of the spring connecting the suspension arm and the vehicle body member.

Abstract: A battery having an electrode assembly including a first electrode, a second electrode, and a separator between the first and the second electrode, the first electrode having a first portion including an active material extending between a pair of first sides, and a second portion extending between the pair of first sides and exposed beyond the separator, and at least part of the second portion includes an electrode tab; a battery housing having a first opening at a first end and a second end opposite the first end, the battery housing accommodating the electrode assembly; and a first current collector including a support portion on the electrode assembly, a first tab coupling portion extending from the support portion and coupled with the second portion of the first electrode and a first housing coupling portion extending from the support portion and electrically coupled onto an inner surface of the battery housing.

Abstract: A battery includes an electrode assembly including a first electrode, a second electrode, and a separator between the first electrode and second electrode, a first portion including an active material extending between a pair of first sides, and a second portion extending between the pair of first sides and exposed beyond the separator, at least a part of the second portion includes an electrode tab; a battery housing having a first end with a first opening, a second end opposite the first end, and an inner surface, the battery housing accommodating the electrode assembly; a first current collector including a tab coupling portion coupled to the second portion of the first electrode and a housing coupling portion extending from the tab coupling portion and electrically coupled to the inner surface of the battery housing; and a cap covering the first opening of the battery housing.

Abstract: A multilayer electronic component has a body and a non-conductive resin layer. The non-conductive resin layer includes a body cover portion disposed in a region of an external surface of the body in which an electrode layer of an external electrode is not disposed, and an extending portion extending from the body cover portion between the electrode layer and a conductive resin layer of the external electrode, to thereby suppress arc discharge, improve bending strength, and improve moisture resistance.

Abstract: Provided are a composition and a kit, each for culturing natural killer cells, and a method of using the same. According to the composition for culturing natural killer cells according to aspect, and a method of culturing natural killer cells using the same, when natural killer cells are cultured in peripheral blood mononuclear cells, they are cultured in a medium including the composition for culturing natural killer cells, the composition including magnetic particles, of which at least one surface is bound with an activating receptor ligand, an inhibitory receptor ligand, a costimulatory receptor ligand, a cytokine, a cytokine receptor, an immune checkpoint ligand, a blocking antibody, or a combination thereof, thereby proliferating natural killer cells in a large quantity and promoting activation or inhibition of natural killer cells, or expansion of natural killer cells. Accordingly, the natural killer cells cultured using the same may be usefully applied to immune cell therapy products.

Abstract: A multilayer electronic component has a body and a non-conductive resin layer. The non-conductive resin layer includes a body cover portion disposed in a region of an external surface of the body in which an electrode layer of an external electrode is not disposed, and an extending portion extending from the body cover portion between the electrode layer and a conductive resin layer of the external electrode, to thereby suppress arc discharge, improve bending strength, and improve moisture resistance.

Abstract: According to various example embodiments, a data management method of an electronic device includes obtaining selection information on or regarding a first product, obtaining selection information on a second product corresponding to the first product based on the selection information on the first product, identifying purchase information about the first product and the second product, transmitting the purchase information about the first product to a first server related to delivery of the first product and transmitting the purchase information about the second product to a second server, and transmitting activation-related information of the second product to the second server in response to delivery status information of the first product, wherein the first product includes a physical product requiring delivery, and the second product includes an insurance product for the first product.

Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.

Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.

Abstract: A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Abstract: A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Abstract: A semiconductor memory device includes a peripheral logic structure including peripheral circuits on a substrate, a horizontal semiconductor layer extending along a top surface of the peripheral logic structure, a plurality of stack structures arranged on the horizontal semiconductor layer along a first direction, and a plurality of electrode separation regions in each of the plurality of stack structures to extend in a second direction, which is different from the first direction, wherein each of the plurality of stack structures includes a first electrode pad and a second electrode pad on the first electrode pad, the first electrode pad protruding in the first direction beyond the second electrode pad by a first width, and the first electrode pad protrudes in the second direction beyond the second electrode pad by a second width, which is different from the first width.

Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.

Abstract: A vertical memory device includes a substrate including a first region including a cell array formed thereon and a second region surrounding the first region, the second region including a stair structure formed thereon, gate electrodes stacked on the substrate to be spaced apart from each other in a first direction vertical to an upper surface of the substrate, each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate and including a pad at an end portion thereof in the second direction, a channel extending through the gate electrodes in the first direction on the first region of the substrate, and contact plugs formed on the second region, the contact plugs extending in the first direction to contact the pads of the gate electrodes respectively.