Abstract: In a method for a thin film forming apparatus, after the deposition of a thin film is completed, a cleaning gas may be introduced repeatedly into an interior of a process chamber for predetermined intervals. The method may be performed without a drastic temperature drop in the process chamber in order to remove a thin film layer left in the chamber. A purge gas may introduced into the chamber continuously or alternatively with the cleaning gas.

Abstract: A shower head includes measures to secure a port of one plate of the shower head to another plate of the shower head. A first plate of the shower head may have a bottom surface, a recess in the center of the bottom surface, and a first through-hole extending from the center of the recess. A second plate includes a plate-like base, and the port. The port projects from the base and includes a body defining a first flow passageway in fluid communication with the first through-hole. The port also includes a plurality of flanges. Port fixing structure is provided on a lower surface of the first plate to clamp the flanges of the port to the first plate. Alternatively, the first plate may include a plate-like base and a port projecting from the base. The port has a male threaded part at its distal end. The second plate has a corresponding female threaded part in which the male threaded part of the port is received.

Abstract: A valve assembly prevents leaks in an exhaust system of a semiconductor device manufacturing apparatus. One side of a body of the valve assembly is connected to a process chamber or a pump, and the side is connected to a trap. The valve body defines a passageway through which gas flows through the valve body. Three valves mounted to the body are open while gas is being discharged from the process chamber, and are closed when the trap is being cleaned. The valves divide the passageway into a first region located between the first and second valves, and a second region located between the second and third valves. A high pressure is maintained in the first region, and a low pressure is maintained in the second region when the valves are closed and cleaning solution is being supplied into the trap.

Abstract: A clamp holds a semiconductor wafer during an Al reflow process. The clamp is made of a ceramic material, and thereby clamp surface roughening which damages semiconductor wafers and other damaging of the wafer caused by the deformation of the clamp are avoided. A sloped surface of the clamp pad can also reduce the damage on the wafer by reducing the contact area between the clamp pad and the wafer. In addition, the clamp has several features that can reduce heat dissipation from the wafer to outside during the Al reflow. Slots formed on the pad reduce the amount of heat conduction through the clamp, and the polished inner surface of the clamp cap reflects the heat radiated from the wafer back to the wafer.