Abstract: An impulse radio-based ultra wideband communication system, using an ultra wideband impulse and a 1-bit high-speed digital sampler, includes a transmitting RF module, a receiving RF module, a signal recovery unit, a transmitting signal processor, a receiving signal processor, and an ultra wideband antenna. The transmitting RF module includes an integrated impulse generator capable of implementing on-off-keying modulation and pulse position modulation, and an amplifier for amplifying output of the integrated impulse generator. The receiving RF module includes a two stage envelope detector for detecting a received signal and a comparator for converting the detected signal into a rectangular pulse. The signal recovery unit restores the signal from the receiving RF module to a digital signal using the 1-bit digital sampler. The signal processor includes a receiving signal processor for synchronizing the digital signal and decoding the detected signal.

Abstract: Disclosed is an alignment layer rubbing apparatus including a table for seating a glass substrate and a rubbing roller movably positioned on top of the table so as to rub an alignment layer of the glass substrate seated on the table. The table and the rubbing roller are tilted at a predetermined angle, and the rubbing roller is adapted to move at an angle of 0° on the table. Therefore, the damage inflicted on the alignment layer due to poor aligning of rubbing fabric attached to the rubbing roller or due to the existence of an alien substance on a surface of the rubbing roller is not concentrated, but rather spans across a region. This reduces the occurrence of rubbing stains and the visibility of damaged parts.

Abstract: A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.

Abstract: A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the first oxide layer including the lower electrode, the second oxide having a hole for exposing a part of the lower electrode; a phase change layer formed on a surface of the hole with a uniform thickness so as to make contact with the lower electrode; and an upper electrode formed in the hole and on a part of the second oxide layer, the part being adjacent to the hole.

Abstract: Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substrate formed with an insulating interlayer including a tungsten plug, forming a first oxide layer on the semiconductor substrate, forming a pad-type bottom electrode, which makes contact with the tungsten plug, in the first oxide layer, forming a second oxide layer on the first oxide layer including the bottom electrode, and forming a porous polystyrene pattern on the second oxide layer such that a predetermined portion of the second oxide layer corresponding to a center portion of the bottom electrode is covered with the porous polystyrene pattern.

Abstract: A phase change RAM device includes a semiconductor substrate having a phase change cell area and a voltage application area; a first oxide layer, a nitride layer and a second oxide layer sequentially formed on the semiconductor substrate; a first plug formed in the first oxide layer, the nitride layer and the second oxide layer of the phase change cell area; a second plug formed in the first oxide layer and the nitride layer of the voltage application area; a conductive line formed in the second oxide layer; a third oxide layer formed on the second oxide layer; a lower electrode shaped like a plug, the lower electrode being formed so as to directly make contact with the first plug; and a phase change layer and an upper electrode sequentially formed on the lower electrode in a pattern form.

Abstract: Disclosed is a phase change memory device having a uniformly decreased writing current necessary for phase change of a phase change layer and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate having a lower pattern; a first oxide layer formed on the semiconductor substrate to cover the lower pattern; a bottom electrode contact formed as a plug shape within the first oxide layer; a nano-size insulation layer formed on the first oxide layer including the bottom electrode contact; a phase change layer formed on the nano-size insulation layer; a top electrode formed on the phase change layer; a second oxide layer formed on the overall surface of the resulting substrate to cover a phase change cell having the bottom electrode contact, the nano-size insulation layer, the phase change layer, and the top electrode laminated successively; and a metal wiring formed within the second oxide layer to contact the top electrode.

Abstract: There is provided a spanner comprising: a head portion fastening and loosening an object: a pair of slide pieces symmetrically positioned inside the head portion in a wedge shape, each slide piece being coupled to the head portion to be externally slidable between the head portion and the object; and a coil spring disposed between an inner bottom surface of the head portion and one end of each slide piece opposed to the inner bottom surface, the coil spring elastically supporting each slide piece so as to elastically bias the slide piece in a direction opposite to an opening direction of the head portion. Because the spanner having the above-mentioned construction is provided with the slidable slide piece, it is possible to continuously fasten and loosen a bolt without pulling out the spanner even in a small space.

Abstract: A refrigerator, which minimizes and easily adjusts a difference of heights of doors, and reduces the number of contact points with a floor of an indoor space, thereby being easily moved and installed. A pair of rear wheels are installed at both corners of a rear part of a bottom surface of a main body and one front wheel is installed at an approximately central point of a front part of the bottom surface so that the refrigerator is moved while the refrigerator is supported at three points. Height adjustable legs, heights of which are adjusted, are installed at both corners of the front part of the bottom surface, and the height adjustable legs together with the front and rear wheels allow the refrigerator to be leveled.

Abstract: A front panel for an integral type air conditioner is provided. The front panel includes a side intake hole formed at a side portion thereof such that air from a space to be air conditioned is taken in there through. The front panel also has a discharge hole through which the intake air is discharged.

Abstract: An integral type air conditioner is provided. The air conditioner has a lower air guide in which a plurality of fans are installed such that wind channels generated by the respective fans do not have influence on each other. The air conditioner also has an upper air guide which allows air discharged from the lower air guide to be discharged through one of a plurality of paths to the outside.