Patents by Inventor Hae-Ryung LEE

Hae-Ryung LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11850805
    Abstract: A method for manufacturing a PDMS device in accordance with an exemplary embodiment of the present invention surface treats the entire surface of a pattern with a thiol group (—SH), so that a hydrogel may be connected to the surface of the pattern by a covalent bond under ultraviolet rays. Therefore, a PDMS device manufactured by the above method has an advantage in that the shape thereof may be stably maintained without the swelling or desorption of a hydrogel even when an electrolyte is filled in a pattern.
    Type: Grant
    Filed: July 1, 2021
    Date of Patent: December 26, 2023
    Assignee: SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION
    Inventors: Taek Dong Chung, Young-Chang Joo, Jeong-Yun Sun, Seok Hee Han, Sung Il Kim, Hae-Ryung Lee, Seung-Min Lim
  • Patent number: 11474069
    Abstract: Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: October 18, 2022
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jeong-Yun Sun, Young-Chang Joo, Taek Dong Chung, Hae-Ryung Lee, Seung-Min Lim, Seok Hee Han, Hyunjae Yoo
  • Publication number: 20220063211
    Abstract: A method for manufacturing a PDMS device in accordance with an exemplary embodiment of the present invention surface treats the entire surface of a pattern with a thiol group (—SH), so that a hydrogel may be connected to the surface of the pattern by a covalent bond under ultraviolet rays. Therefore, a PDMS device manufactured by the above method has an advantage in that the shape thereof may be stably maintained without the swelling or desorption of a hydrogel even when an electrolyte is filled in a pattern.
    Type: Application
    Filed: July 1, 2021
    Publication date: March 3, 2022
    Inventors: Taek Dong CHUNG, Young-Chang JOO, Jeong-Yun SUN, Seok Hee HAN, Sung Il KIM, Hae-Ryung LEE, Seung-Min LIM
  • Publication number: 20200378918
    Abstract: Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.
    Type: Application
    Filed: May 29, 2020
    Publication date: December 3, 2020
    Inventors: Jeong-Yun SUN, Young-Chang Joo, Taek Dong Chung, Hae-Ryung LEE, Seung-Min LIM, Seok Hee HAN, Hyunjae YOO