Patents by Inventor Hae Seok Cho

Hae Seok Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6473256
    Abstract: The present invention includes a circuit which can achieve a 200 nano second write to read time. The present invention eliminates a switch in the RMR measurement circuit.
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: October 29, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Hae-Seok Cho, Indumini Ranmuthu
  • Patent number: 6433972
    Abstract: A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), where X is either Cr or Pd. The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18).
    Type: Grant
    Filed: September 1, 1999
    Date of Patent: August 13, 2002
    Assignee: Seagate Technology LLC
    Inventors: Sining Mao, Zheng Gao, Hae Seok Cho, Stephen C. Cool
  • Publication number: 20010015865
    Abstract: The present invention includes a circuit which can achieve a 200 nano second write to read time. The present invention eliminates a switch in the RMR measurement circuit.
    Type: Application
    Filed: December 16, 1998
    Publication date: August 23, 2001
    Inventors: HAE-SEOK CHO, INDUMINI RANMUTHU