Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.

Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A first electrode is electrically connected to the first conductivity-type semiconductor layer. A light-transmissive conductive layer is disposed on the second conductivity-type semiconductor layer. A second electrode includes a reflective metal layer and an insulating layer.

Abstract: A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.

Abstract: A surface light source device includes a light source body, first and second electrodes, a light reflecting layer, and a fluorescent layer. The light source body is configured to generate light. The first and second electrodes are each disposed adjacent to a corresponding opposite end portion of the light source body. The first and second electrodes receive a discharge voltage that creates a potential difference across the light source body. The light reflecting layer is disposed at an internal surface of the light source body. The light reflecting layer includes light diffusing particles having at least two sizes. The fluorescent layer is disposed at selected regions of the light source body. Therefore, the light reflecting layer is not deformed by heat and enhances reflectivity without changing a color coordinates.

Abstract: A surface light source device includes a light source body, a partition member, an isolating member and a voltage applying part. The light source body has an internal space into which discharge gas is injected. The partition wall divides the internal space into discharge spaces. The partition wall has a connection hole that connects the discharge spaces with each other. The isolating member is disposed such that the isolating member corresponds to the connection hole. The isolating member seals the connection hole to isolate the discharge spaces from each other. The voltage applying part induces discharge of the discharge gas in the discharge spaces. Thus, current drift is prevented.

Abstract: There is provided a surface light source device containing 50 ppm or less of water, 50 ppm or less of nitrogen, 30 ppm or less of oxygen, 20 ppm or less of carbon monoxide, and 20 ppm or less of carbon dioxide as impurities in its discharge space. Accordingly, the surface light source device with the impurity standards has improved brightness.

Abstract: A method for treating surface of the phosphor particles, which comprises the steps of dispersing the phosphor particles in a solvent, separately dissolving a precursor of a surface-protecting material in a solvent, and combining the resulting dispersion and solution provides phosphor particles having an evenly coated layer of the surface-protecting material.

Abstract: A flat fluorescent lamp includes a body and a fluorescent layer. The body generates invisible radiation. The fluorescent layer has a luminance-enhancing pattern formed thereon. The fluorescent layer converts the invisible radiation into visible light. Therefore, a surface area of the fluorescent layer is increased to increase an amount of visible light, so that luminance of a display device employing the flat fluorescent lamp is enhanced.

Abstract: A surface light source device includes a light source body, first and second electrodes, a light reflecting layer, and a fluorescent layer. The light source body is configured to generate light. The first and second electrodes are each disposed adjacent to a corresponding opposite end portion of the light source body. The first and second electrodes receive a discharge voltage that creates a potential difference across the light source body. The light reflecting layer is disposed at an internal surface of the light source body. The light reflecting layer includes light diffusing particles having at least two sizes. The fluorescent layer is disposed at selected regions of the light source body. Therefore, the light reflecting layer is not deformed by heat and enhances reflectivity without changing a color coordinates.

Abstract: A surface light source device includes a light source body, a partition member, an isolating member and a voltage applying part. The light source body has an internal space into which discharge gas is injected. The partition wall divides the internal space into discharge spaces. The partition wall has a connection hole that connects the discharge spaces with each other. The isolating member is disposed such that the isolating member corresponds to the connection hole. The isolating member seals the connection hole to isolate the discharge spaces from each other. The voltage applying part induces discharge of the discharge gas in the discharge spaces. Thus, current drift is prevented.

Abstract: In a method of manufacturing a surface light source, a plurality of partition walls is formed on a lower substrate. The partition walls generate a first stress in the lower substrate along a first direction. A reflective layer is formed on the lower substrate. The reflective layer generates a second stress in the lower substrate along a second direction. After forming a fluorescent layer on the reflective layer and beneath an upper substrate, the upper and lower substrates are sealed to form discharge spaces between the upper and lower substrates.