Patents by Inventor Haewan YANG

Haewan YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, related manufacturing method, and related electronic device
    Patent number: 9337206
    Abstract: A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first mask material layer, and a sacrificial layer; partially removing, through a first mask, the sacrificial layer to form a sacrificial members; providing a second mask material layer on the sacrificial members; partially removing the second mask material layer to form mask units that contact sides of the sacrificial members; removing the sacrificial members; providing a third mask material layer between two of the mask units for forming a second mask; partially removing, through the second mask, the first mask material layer to form a third mask; and partially removing, through the third mask, the gate material layer to form a control gate and a select gate.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: May 10, 2016
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Guanhua Li, Haewan Yang
  • SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
    Publication number: 20160043094
    Abstract: A method for manufacturing a semiconductor device may include the following steps: providing a composite structure that includes a gate material layer, a first mask material layer, and a sacrificial layer; partially removing, through a first mask, the sacrificial layer to form a sacrificial members; providing a second mask material layer on the sacrificial members; partially removing the second mask material layer to form mask units that contact sides of the sacrificial members; removing the sacrificial members; providing a third mask material layer between two of the mask units for forming a second mask; partially removing, through the second mask, the first mask material layer to form a third mask; and partially removing, through the third mask, the gate material layer to form a control gate and a select gate.
    Type: Application
    Filed: June 29, 2015
    Publication date: February 11, 2016
    Inventors: Guanhua LI, Haewan YANG