Abstract: A battery cell pressing jig for assembling a battery cell includes a lower plate of which an upper surface is provided with a first pressing member for seating and arranging a plurality of battery cells thereon, an upper plate which is provided above the lower plate and of which a lower surface is provided with a second pressing member, on which the plurality of battery cells are seated in an arranged state, thereon, a pressing part configured to press both the upper plate and the lower plate toward the battery cell, and a plurality of sensing members coupled onto the upper plate to be electrically connected to the plurality of battery cells.

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Abstract: A battery pack according to an embodiment of the present disclosure includes at least one battery cell including a vent portion configured to force gas out; and a pack case in which the at least one battery cell is accommodated such that the vent portion faces a lower side of the battery pack. The vent portion is exposed from the battery pack.

Abstract: A battery pack according to an embodiment of the present disclosure includes a plurality of battery cells, a cooling unit disposed between the plurality of battery cells along a lengthwise direction of the battery pack, and a side structure unit accommodating the cooling unit and the plurality of battery cells, wherein the battery cells, the cooling unit and the side structure unit are arranged at a preset distance ratio for close contact with each other.

Abstract: A battery pack according to an embodiment of the present disclosure includes at least one battery cell including a vent portion configured to force gas out; and a pack case in which the at least one battery cell is accommodated such that the vent portion faces a lower side of the battery pack. The vent portion is exposed from the battery pack.

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises supplying a first process fluid containing a precursor and a first supercritical fluid to a reactor to raise a pressure of the reactor to a first pressure equal to or greater than a critical pressure, subsequently, first venting the reactor to lower the pressure in the reactor to a second pressure, subsequently, supplying a second process fluid containing a reducing fluid to the reactor to raise the pressure in the reactor to a third pressure, subsequently, second venting the reactor to lower the pressure in the reactor to a fourth pressure.

Abstract: Provided is a substrate treatment apparatus using a supercritical fluid, the apparatus capable of depositing a conformal film in a trench with a high aspect ratio and capable of performing void-free complete gap-filling. The substrate treatment apparatus includes: an upper vessel including a first body and a supply port formed in the first body and supplying a process fluid; a baffle plate installed in the upper vessel and supplying the process fluid supplied through the supply port to a treatment space by diffusing the process fluid; a lower vessel including a second body and an exhaust port formed in the second body and exhausting the process fluid from the treatment space; and a support plate installed in the lower vessel to face the baffle plate and supporting a substrate, wherein while a supercritical process is performed in the treatment space, the support plate is heated so that the temperature of the support plate is higher than that of the first body.

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids.

Abstract: A battery pack according to an embodiment of the present disclosure includes at least one battery cell including a vent portion to force gas out; and a pack case in which the at least one battery cell is accommodated such that the vent portion faces a lower side of the battery pack. The vent portion exposed from the battery pack.

Abstract: A method of fabricating a semiconductor device, which is capable of sufficiently filling trenches, is provided. The method includes: providing a substrate having defined thereon a plurality of active regions, which are spaced apart from one another by a device isolation film; forming a plurality of wordline trenches, which extend longitudinally in one direction, by removing portions of the active regions and portions of the device isolation film; forming gate insulating films along inner sidewalls of the wordline trenches; and forming wordlines, which fill portions of the wordline trenches, on the gate insulating films, wherein the forming the wordlines, comprises filling the portions of the wordline trenches with metal layers using a supercritical fluid deposition (SFD) method.

Abstract: A battery pack includes a plurality of battery cells; a housing accommodating the plurality of battery cells; a plurality of bus bars electrically connecting the plurality of battery cells; and a first welding portion for coupling a first electrode terminal provided in each of the plurality of battery cells to the bus bar and a second welding portion for coupling a second electrode terminal provided in each of the plurality of battery cells to the bus bar. At least one of the first welding portion and the second welding portion includes a region in which a laser welding line formed on the bus bar proceeds in a direction opposite to an extension direction of the welding portion.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

Abstract: A semiconductor device including memory cells that are three-dimensionally arranged is provided.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a supply line having a first open/close valve installed thereon and configured to supply a treating fluid to the treating space; a heater installed on the supply line and configured to heat the treating fluid; an exhaust line having a second open/close valve installed thereon and configured to exhaust the treating space; and, a controller configured to control the first open/close value and the second open/close valve such that the treating fluid heated is supplied to and exhausted from the treating space before a treating process is performed on a substrate in the treating space.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first chamber having a supply port for supplying a treating fluid; a second chamber in combination with the first chamber defining a treating space; a support member configured to support a substrate in the treating space; and a baffle unit installed in the first chamber to face the support port, and wherein the baffle unit includes: a first baffle assembly including a first baffle having first holes through which the treating fluid flow; and a second baffle assembly installed at a position farther from the support port than the first baffle assembly, and including a second baffle having second holes through which the treating fluid flow.

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Abstract: Provided is a method of manufacturing a semiconductor device, the method including steps of providing a semiconductor substrate having one or more trenches, forming a gate insulating layer on the semiconductor substrate inside the trenches, and forming a buried gate electrode layer on the gate insulating layer to at least partially fill the trenches, wherein the step of forming the buried gate electrode layer includes a step of repeating a unit cycle a plurality of times, the unit cycle including an atomic layer deposition (ALD) process for forming a conductive layer on the gate insulating layer to serve as the buried gate electrode layer, and an atomic layer etching (ALE) process for preferentially etching portions of the conductive layer formed near the trenches and portions of the conductive layer formed on upper ends of the trenches over other portions of the conductive layer inside the trenches.