Patents by Inventor Hae Won YANG

Hae Won YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11384255
    Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: July 12, 2022
    Assignee: KCTECH CO., LTD.
    Inventors: Hae Won Yang, Jun Ha Hwang, Jung Yoon Kim, Kwang Soo Park
  • Publication number: 20220177727
    Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.
    Type: Application
    Filed: July 11, 2019
    Publication date: June 9, 2022
    Applicant: KCTECH CO., LTD.
    Inventors: Jung Yoon KIM, Jun Ha HWANG, Kwang Soo PARK, Hae Won YANG
  • Publication number: 20220064488
    Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.
    Type: Application
    Filed: November 4, 2019
    Publication date: March 3, 2022
    Applicant: KCTECH CO., LTD.
    Inventors: Nak Hyun CHOI, Jung Yoon KIM, Hae Won YANG, Soo Wan CHOI
  • Publication number: 20220064489
    Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.
    Type: Application
    Filed: July 3, 2019
    Publication date: March 3, 2022
    Applicant: KCTECH CO., LTD.
    Inventors: Soo Wan CHOI, Jung Yoon KIM, Nak Hyun CHOI, Hae Won YANG
  • Publication number: 20210163785
    Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.
    Type: Application
    Filed: November 13, 2018
    Publication date: June 3, 2021
    Applicant: KCTECH CO., LTD.
    Inventors: Jung Yoon KIM, Jun Ha HWANG, Kwang Soo PARK, Hae Won YANG
  • Publication number: 20210079262
    Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 18, 2021
    Applicant: KCTECH CO., LTD.
    Inventors: Hae Won YANG, Jun Ha HWANG, Jung Yoon KIM, Kwang Soo PARK