Abstract: A gas diffuser plate configured to diffuse gases delivered into a cyclic deposition chamber is disclosed. The gas diffuser plate as fabricated comprising a gas diffuser plate having a laser-textured surface configured to face a substrate when present in the cyclic deposition chamber. The laser-textured surface comprises microstructures that serve to provide an emissivity of the gas diffuser plate between about 0.2 and about 0.9. The gas diffuser plate further comprises a corrosion-resistant material coating the laser-textured surface. The emissivity of the gas diffuser plate is at least partially based on the parameters of the processing laser.

Abstract: A sub-pixel may include a first transistor configured to generate a driving current, a first capacitor including a first electrode connected to a first electrode of the first transistor, and a second electrode, a second capacitor including a first electrode connected to a control electrode of the first transistor, and a second electrode connected to the second electrode of the first capacitor, a second transistor configured to provide a data voltage to the second electrode of the first capacitor in response to a write gate signal, and a light emitting element configured to receive the driving current and emit light.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a N precursor at a N precursor flow rate, wherein a ratio of the N precursor flow rate to the Ti precursor flow rate exceeds 3.

Abstract: A smart lens compositions according to an embodiment includes a non-expandable module and a monomer blend containing a monofunctional silicone monomer and a bifunctional silicone monomer. A smart lens may be manufactured using the above-described smart lens composition. The expansion and distortion of the lens may be suppressed when hydrating the smart lens, and structural stability and uniformity of the smart lens may be improved.

Abstract: A vehicle seat includes a fixed frame installed in a vehicle body, a rotating link connected to the fixed frame through a rotation shaft and rotating relative to the rotation shaft, a seat cushion frame having one side of a rear end portion hinge-connected to the rotating link at a first connection point to rotate the rotating link when rotating, and a seat back frame having one side of a lower end portion hinge-connected to the fixed frame at a second connection point and the other side of the lower end portion hinge-connected to the other side of the rear end portion of the seat cushion frame at a third connection point to rotate relative to the fixed frame when the seat cushion frame is rotated.

Abstract: Disclosed is a display device mounted on a vehicle, the display device including a display module, a back cover surrounding side and rear surfaces of the display module, the back cover having a cover bracket formed by protruding from a lower side of a rear surface thereof, a printed circuit board connected to the display module and having one surface covered by the cover bracket, and a bottom cover covering the other surface of the printed circuit board and coupled to the cover bracket, wherein the printed circuit board is positioned vertical to the rear surface of the back cover, whereby watertight performance of the display device may be improved by covering a printed circuit board through a cover bracket formed to protrude from a back cover and a bottom cover coupled to the cover bracket.

Abstract: A smart contact lens includes a lens body including a first lens surface in contact with an eye and a second lens surface positioned opposite the first lens surface, and an antenna disposed between the first lens surface and the second lens surface and configured to form a closed loop. The antenna may include an antenna ring forming a shape of a ring as a whole; and an antenna buffer bent and extended from the antenna ring in a diameter direction of the antenna ring.

Abstract: A semiconductor device includes a semiconductor substrate having first and second regions therein, a first lower semiconductor pattern, which protrudes from the semiconductor substrate in the first region and extends in a first direction across the semiconductor substrate, and a first gate electrode, which extends across the first lower semiconductor pattern and the semiconductor substrate in a second direction. A plurality of semiconductor sheet patterns are provided, which are spaced apart from each other in a third direction to thereby define a vertical stack of semiconductor sheet patterns, on the first lower semiconductor pattern. A first gate insulating film is provided, which separates the plurality of semiconductor sheet patterns from the first gate electrode. A second lower semiconductor pattern is provided, which protrudes from the semiconductor substrate in the second region. A plurality of wire patterns are provided, which are spaced apart from each other on the second lower semiconductor pattern.

Abstract: A substrate for display comprises one surface, the other surface, a first area (folding area) and a second area (non-folding area). A first hole passing through the one surface and the other surface is formed on the first area. A 1-1 groove is formed on one surface of the first area in the direction from the one surface to the other surface. A 1-2 groove is formed on the other surface of the first area in the direction from the other surface to the one surface. A 2-1 groove is formed on one surface of the second area in the direction from the one surface to the other surface. A 2-2 groove is formed on the other surface of the second area in the direction from the other surface to the one surface. The 1-1 groove and 1-2 groove and the 2-1 groove and 2-2 groove do not overlap each other in the thickness direction of the substrate for display.

Abstract: A multilevel processing in memory (PIM) includes a processor in which an optimal operator installed at several layers of memory, an accelerator type circuit for processing an irregular operation, and a scheduler for processing an irregular operation have been installed. The multilevel processing in memory includes a memory module including at least one rank in which a computation operation and a data storage operation are performed in response to a control command from a memory controller. The memory module, the rank, a PIM command scheduler included in the rank, a bank group processing unit, and a bank group constitute a plurality of layers, respectively.

Abstract: An ion beam etching apparatus comprising a plasma chamber, a plasma source disposed on top of the plasma chamber and configured to generate plasma, a process chamber defining a treating area where a substrate is treated, a grid structure disposed between the process chamber and the plasma chamber, wherein the grid structure receives the plasma, and supplies ions or radicals toward the substrate, a discharge line connected to the grid structure, and a first pumping system connected to the discharge line, wherein particles or polymers within the grid structure are discharged through the discharge line.

Abstract: The present disclosure relates to an isolated anti-FcRN antibody, which is an antibody binding to FcRN (stands for neonatal Fc receptor, also called FcRP, FcRB or Brambell receptor) that is a receptor with a high affinity for IgG or a fragment thereof, a method of preparing thereof, a composition for treating autoimmune disease, which comprises the antibody, and a method of treating and diagnosing autoimmunre diseases using the antibody. The FcRn-specific antibody according to the present disclosure binds to FcRn non-competitively with IgG to reduce serum pathogenic auto-antibody levels, and thus can be used for the treatment of autoimmune diseases.

Abstract: The present invention relates to a composition, for preventing, relieving, or treating a muscle weakness-related disease, comprising a celery seed extract. The celery seed extract according to the present invention causes a few or no side effects by using a natural product, may increase muscle mass and muscle strength to not only prevent muscle weakness but also inhibit weight gain and body fat increase, and may reduce serum lipid profiles and hepatotoxicity markers (GOT and GPT), and thus is expected to be utilized for preventing, relieving, or treating muscle weakness-related diseases, metabolic diseases, liver diseases, or the like.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: A gas diffuser plate in a cyclic deposition chamber is disclosed. The gas diffuser plate as fabricated comprises a substrate diffuser plate having a substrate emissivity and a coating formed on the substrate diffuser plate. The gas diffuser plate having the substrate diffuser plate coated with the coating has an emissivity higher than the substrate emissivity. The coating comprises a first layer formed on the substrate diffuser plate and comprising a first material configured to modulate the emissivity of the gas diffuser plate, and a second layer comprising a second corrosion-resistant material. The first material comprises titanium nitride oxide (TiNxOy). The emissivity of the gas diffuser plate is at least partially based on the ratio of nitrogen and oxygen in TiNxOy.

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).