Abstract: The present invention relates to a composition, for preventing, relieving, or treating a muscle weakness-related disease, comprising a celery seed extract. The celery seed extract according to the present invention causes a few or no side effects by using a natural product, may increase muscle mass and muscle strength to not only prevent muscle weakness but also inhibit weight gain and body fat increase, and may reduce serum lipid profiles and hepatotoxicity markers (GOT and GPT), and thus is expected to be utilized for preventing, relieving, or treating muscle weakness-related diseases, metabolic diseases, liver diseases, or the like.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: A gas diffuser plate in a cyclic deposition chamber is disclosed. The gas diffuser plate as fabricated comprises a substrate diffuser plate having a substrate emissivity and a coating formed on the substrate diffuser plate. The gas diffuser plate having the substrate diffuser plate coated with the coating has an emissivity higher than the substrate emissivity. The coating comprises a first layer formed on the substrate diffuser plate and comprising a first material configured to modulate the emissivity of the gas diffuser plate, and a second layer comprising a second corrosion-resistant material. The first material comprises titanium nitride oxide (TiNxOy). The emissivity of the gas diffuser plate is at least partially based on the ratio of nitrogen and oxygen in TiNxOy.

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a diffusion barrier comprising TiSiN comprises exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a NH3 precursor at a NH3 precursor flow rate, after forming the TiN film, subjecting the semiconductor substrate, without further deposition of the TiN thin film, to a post-deposition exposure of NH3 at a second NH3 flow rate.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a N precursor at a N precursor flow rate, wherein a ratio of the N precursor flow rate to the Ti precursor flow rate exceeds 3.

Abstract: This invention relates to a non-aqueous liquid electrolyte composition suitable for secondary battery cells, especially lithium-ion secondary battery cells. Such electrolyte composition comprises a) at least one non-fluorinated cyclic carbonate and at least one fluorinated cyclic carbonate, b) at least one fluorinated acyclic carboxylic acid ester, c) at least one electrolyte salt, d) at least one lithium borate compound, e) at least one cyclic sulfur compound, and f) optionally at least one cyclic carboxylic acid anhydride, all components being present in specific proportions. It can advantageously be used in batteries comprising a cathode material comprising a lithium nickel manganese cobalt oxide (NMC) or a lithium cobalt oxide (LCO), especially at a high operating voltage.

Abstract: A liquid electrolyte lithium secondary battery cell comprising: —a positive electrode material comprising a lithium transition metal-based oxide powder having a general formula Li1+a ((Niz (Ni0.5Mn0.5)y Cox)1-k Ak)1-a O2, wherein A is a dopant, ?0.025?a?0.025, 0.18?x?0.22, 0.42?z?0.52, 1.075<z/y<1.625, x+y+z=1 and k?0.01; and—an electrolyte composition comprising: a) at least one cyclic carbonate, b) at least one fluorinated acyclic carboxylic acid ester, c) at least one electrolyte salt, d) at least one lithium compound selected from lithium phosphate compounds, lithium boron compounds, lithium sulfonate compounds and mixtures thereof, e) at least one cyclic sulfur compound, and f) optionally at least one cyclic carboxylic acid anhydride.

Abstract: A liquid electrolyte lithium secondary battery cell comprising: a positive electrode including a powderous positive active material having the following chemical formula: Li1?x(Co1-a-b-cNiaMnbM?c)1?xO2 with ?0.01?x?0.01, 0.00?a?0.09, 0.01?b?0.05, and 0.00?c?0.03 wherein M? is either one or more metals of the group consisting of Al, Mg, Ti and Zr; and an electrolyte composition comprising at least one cyclic carbonate; at least one fluorinated acyclic carboxylic acid ester; at least one electrolyte salt; at least one lithium compound selected from lithium phosphates compounds, lithium boron compounds, lithium sulfonates compounds and mixtures thereof; at least one cyclic sulfur compound; and optionally at least one cyclic carboxylic acid anhydride.

Abstract: The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN).

Abstract: During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.