Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.

Abstract: The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.

Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.

Abstract: The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process. The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming prosperities, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.

Abstract: The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.

Abstract: The present invention relates to a low dielectric substance essential for a next generating electrical device such as a semiconductor device having high performance and high density, and particularly to a process for preparing a low dielectric organosilicate polymer, a hydrolysis condensation product of a carbon-bridged oligomer; a process for manufacturing an insulating film using an organosilicate polymer prepared by the process; and an electrical device comprising an insulating film prepared by the process The organosilicate polymer prepared according the process of the present invention is thermally stable, and has good film-forming properties, excellent mechanical strength and crack resistance, and the film manufactured therefrom has excellent insulating properties, film uniformity, dielectric properties, crack resistance, and mechanical strength.