Abstract: A light emitting display device includes a light emitting diode including a first electrode and a second electrode to which a driving voltage is applied, a driving transistor, a second transistor receiving a data voltage and connected to a D node, a storage capacitor connected to the driving transistor and an N node, a hold capacitor connected to the D node and the N node, a third transistor connected to the D node and the driving transistor, a fourth transistor receiving a reference voltage and connected to the driving transistor, a fifth transistor connected to the driving transistor and the N node, a sixth transistor receiving a driving low voltage and connected to the driving transistor, a seventh transistor receiving an initialization voltage and connected the driving transistor, and an eighth transistor connected to the driving transistor and the first electrode of the light emitting diode.

Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. In video encoding and decoding, multiple partition blocks are generated by splitting a target block. A prediction mode is derived for at least a part of the multiple partition blocks, among the multiple partition blocks, and prediction is performed on the multiple partition blocks based on the derived prediction mode. When prediction is performed on the partition blocks, information related to the target block may be used, and information related to an additional partition block, which is predicted prior to the partition block, may be used.

Abstract: There are provided a memory device and an operating method of the memory device. The memory device includes: a memory block including a plurality of sub-blocks; a peripheral circuit for performing first program and erase operations in a first manner in a first sub-block, among the plurality of sub-blocks, and performing second program and erase operations in a second manner in a second sub-block, among the plurality of sub-blocks; and a control circuit configured to, when a cycling number of the second program and erase operations that are performed in the second sub-block is equal to or greater than a reference number, control the peripheral circuit to perform a compensation operation that compensates for a threshold voltage of memory cells included in the first sub-block.

Abstract: A semiconductor memory device and a method of operating the semiconductor memory device are provided. The semiconductor memory device includes a memory block including a plurality of sub-blocks, a peripheral circuit configured to perform a program operation on the memory block, and control logic configured to control the peripheral circuit to perform the program operation on the memory block, wherein the program operation comprises programming to program normal data to a first sub-block, allocated to be a normal sub-block, among the plurality of sub-blocks, and programming parity data of the normal data to a second sub-block, allocated to be a backup block, among the plurality of sub-blocks.

Abstract: A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Abstract: A semiconductor device may include a source line, a bit line, and a gate structure located between the source line and the bit line. The gate structure may include conductive layers and insulating layers that are alternately stacked. The semiconductor device may include a topological insulator that may extend from the bit line to the source line through the gate structure. The topological insulator may include a non-conductor region and semiconductor regions coupled to the non-conductor region and located at a sidewall of the topological insulator. The semiconductor device may also include a memory layer surrounding the topological insulator.

Abstract: A CMOS device, and a method of manufacturing the same, includes a semiconductor substrate and a trench formed in the semiconductor substrate. The CMOS device also includes an oxide semiconductor layer disposed in the trench, the oxide semiconductor layer including a source region, a drain region, and a channel region between the source region and the drain region. The CMOS device further includes a buffer layer between the oxide semiconductor layer and the semiconductor substrate, a gate insulating layer on the oxide semiconductor layer, a gate electrode disposed on the gate insulating layer over the channel region of the oxide semiconductor layer, and impurities distributed in each of the source region and the drain region of the oxide semiconductor layer.

Abstract: The present disclosure provides a memory controller including a state detector detecting whether the memory device is in an idle state, a program controller, based on detection information that indicates a state of the memory device, selecting neighboring strings that are adjacent to a string that is coupled to a memory cell, among the memory cells, on which a program operation or a read operation was performed before the detecting, selecting monitoring memory cells that are coupled to at least one word line, the memory cells being a part of the neighboring strings, and controlling the memory device to perform a plurality of loops to program the monitoring memory cells, and a bad block selector selecting a memory block with the monitoring memory cells as a bad block based on a rate of increase in threshold voltage of a threshold voltage distribution of the monitoring memory cells.

Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. In video encoding and decoding, multiple partition blocks are generated by splitting a target block. A prediction mode is derived for at least a part of the multiple partition blocks, among the multiple partition blocks, and prediction is performed on the multiple partition blocks based on the derived prediction mode. When prediction is performed on the partition blocks, information related to the target block may be used, and information related to an additional partition block, which is predicted prior to the partition block, may be used.

Abstract: A device includes a transmitter coupled to a node, where the node is to couple to a wired link. The transmitter has a plurality of modes of operation including a calibration mode in which a range of communication data rates over the wired link is determined in accordance with a voltage margin corresponding to the wired link at a predetermined error rate. The range of communication data rates includes a maximum data rate, which can be a non-integer multiple of an initial data rate.

Abstract: A rotary type linear reciprocating motion device includes: a driving part rotatably driven by a motor; a rotating part installed at one surface of the driving part, the rotating part transferring a rotational force of the driving part to an applicator; and a reciprocating part installed at the other surface of the driving part, the reciprocating part converting the rotational force of the driving part into a linear reciprocating motion force, the reciprocating part transferring the linear reciprocating motion force to the applicator. The driving part includes: a driving plate having both surfaces at which the rotating part and the reciprocating part are respectively installed; and a driving belt installed at an edge of the driving plate, the driving belt being in contact with a motor shaft of the motor to allow a driving force of the motor to be transferred to the driving plate by a frictional force.

Abstract: A method is disclosed. The method includes sampling a data signal having a voltage value at an expected edge time of the data signal. A first alpha value is generated, and a second alpha value generated in dependence upon the voltage value. The data signal is adjusted by the first alpha value to derive a first adjusted signal. The data signal is adjusted by the second alpha value to derive a second adjusted signal. The first adjusted signal is sampled to output a first data value while the second adjusted signal is sampled to output a second data value. A selection is made between the first data value and the second data value as a function of a prior received data value to determine a received data value.

Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.

Abstract: A device includes a transmitter coupled to a node, where the node is to couple to a wired link. The transmitter has a plurality of modes of operation including a calibration mode in which a range of communication data rates over the wired link is determined in accordance with a voltage margin corresponding to the wired link at a predetermined error rate. The range of communication data rates includes a maximum data rate, which can be a non-integer multiple of an initial data rate.

Abstract: A transceiver architecture supports high-speed communication over a signal lane that extends between a high-performance integrated circuit (IC) and one or more relatively low-performance ICs employing less sophisticated transmitters and receivers. The architecture compensates for performance asymmetry between ICs communicating over a bidirectional lane by instantiating relatively complex transmit and receive equalization circuitry on the higher-performance side of the lane. Both the transmit and receive equalization filter coefficients in the higher-performance IC may be adaptively updated based upon the signal response at the receiver of the higher-performance IC.

Abstract: An integrated circuit capable of on-chip jitter tolerance measurement includes a jitter generator circuit to produce a controlled amount of jitter that is injected into at least one clock signal, and a receive circuit to sample an input signal according to the at least one clock signal. The sampled data values output from the receiver are used to evaluate the integrated circuit's jitter tolerance.

Abstract: An intergrated circuit (IC) chip includes receiver circuitry to receive signals from a second IC chip. The receiver circuitry includes equalization circuitry having at least one tap to equalize the signals. The equalization circuitry includes a tap weight adapter circuit to generate at least one tap weight corresponding to the at least one tap based on edge information of previously received signals.

Abstract: A receiver includes a continuous-time equalizer, a decision-feedback equalizer (DFE), data and error sampling logic, and an adaptation engine. The receiver corrects for inter-symbol interference (ISI) associated with the most recent data symbol (first post cursor ISI) by establishing appropriate equalization settings for the continuous-time equalizer based upon a measure of the first-post-cursor ISI.

Abstract: A device includes a transmitter coupled to a node, where the node is to couple to a wired link. The transmitter has a plurality of modes of operation including a calibration mode in which a range of communication data rates over the wired link is determined in accordance with a voltage margin corresponding to the wired link at a predetermined error rate. The range of communication data rates includes a maximum data rate, which can be a non-integer multiple of an initial data rate.

Abstract: A receiver device implements enhanced data reception with edge-based clock and data recovery such as with a flash analog-to-digital converter architecture. In an example embodiment, the device implements a first phase adjustment control loop, with for example, a bang-bang phase detector, that detects data transitions for adjusting sampling at an optimal edge time with an edge sampler by adjusting a phase of an edge clock of the sampler. This loop may further adjust sampling in received data intervals for optimal data reception by adjusting the phase of a data clock of a data sampler such a flash ADC. The device may also implement a second phase adjustment control loop with, for example, a baud-rate phase detector, that detects data intervals for further adjusting sampling at an optimal data time with the data sampler.