Abstract: Disclosed are a zero-power detecting sensor of a chemical substance and a sensing method. As light is irradiated to the detecting sensor including a graphene, a light absorbing layer, and an electrode stacked, the chemical substance is detected without power.

Abstract: A semiconductor device including: a first gate stack including first insulating patterns and first conductive patterns; a second gate stack on the first gate stack, the second gate stack including second insulating patterns and second conductive patterns; a memory channel structure penetrating the first and second gate stacks; a penetration contact penetrating the first and second gate stacks; and a barrier pattern on opposite sides of the penetration contact, the first insulating patterns include a first connection insulating pattern, which is an uppermost one of the first insulating patterns, the second insulating patterns include a second connection insulating pattern which is in contact with a top surface of the first connection insulating pattern, a bottom surface of the barrier pattern is in contact with the top surface of the first connection insulating pattern, and a top surface of the barrier pattern is in contact with the second connection insulating pattern.

Abstract: An integrated circuit device according to the inventive concept includes: a semiconductor substrate including a cell region and a connection region; a gate stack including a plurality of gate electrodes and a plurality of insulating layers extending on a main surface of the semiconductor substrate in a horizontal direction and alternately stacked thereon in a vertical direction, the gate stack having a stair structure in the connection region; and a plurality of contact plugs in the connection region, wherein, in a portion of the connection region, a first length, in the horizontal direction, of a first gate electrode that is located in the lowest layer among the plurality of gate electrodes is less than a second length, in the horizontal direction, of a second gate electrode that is located above the first gate electrode.

Abstract: Disclosed are a zero-power detecting sensor of a chemical substance and a sensing method. As light is irradiated to the detecting sensor including a graphene, a light absorbing layer, and an electrode stacked, the chemical substance is detected without power.