Patents by Inventor Haeng Don LIM

Haeng Don LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom
    Patent number: 11827650
    Abstract: Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: November 28, 2023
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Sung Woo Cho, Mi Jeong Han, Haeng Don Lim
  • Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
    Patent number: 11459653
    Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: October 4, 2022
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Jang Woo Seo, Sang Yong Jeon, Haeng Don Lim
  • SILICON METAL OXIDE ENCAPSULATION FILM COMPRISING METAL OR METAL OXIDE IN THIN FILM, AND MANUFACTURING METHOD THEREFOR
    Publication number: 20220181578
    Abstract: The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
    Type: Application
    Filed: March 6, 2020
    Publication date: June 9, 2022
    Inventors: Myoung Woon KIM, Sang Ick LEE, Se Jin JANG, Sung Gi KIM, Jeong Joo PARK, Won Mook CHAE, A Ra CHO, Byeong il YANG, Joong Jin PARK, Gun Joo PARK, Sam Dong LEE, Haeng don LIM, Sang Yong JEON
  • METHOD FOR MANUFACTURING MOLYBDENUM-CONTAINING THIN FILM AND MOLYBDENUM-CONTAINING THIN FILM MANUFACTURED THEREBY
    Publication number: 20220018017
    Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
    Type: Application
    Filed: November 13, 2019
    Publication date: January 20, 2022
    Inventors: Myong Woon KIM, Sang Ick LEE, Jang Woo SEO, Sang Yong JEON, Haeng Don LIM
  • Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same
    Patent number: 10913755
    Abstract: The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: February 9, 2021
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Won Mook Chae, Sang Jun Yim, Kang Yong Lee, A Ra Cho, Sang Yong Jeon, Haeng Don Lim
  • METHOD OF MANUFACTURING RUTHENIUM-CONTAINING THIN FILM AND RUTHENIUM-CONTAINING THIN FILM MANUFACTURED THEREFROM
    Publication number: 20200339617
    Abstract: Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
    Type: Application
    Filed: November 1, 2018
    Publication date: October 29, 2020
    Inventors: Myong Woon KIM, Sang Ick LEE, Sung Woo CHO, Mi Jeong HAN, Haeng Don LIM
  • TRANSITION METAL COMPOUND, PREPARATION METHOD THEREFOR, AND COMPOSITION FOR DEPOSITING TRANSITION METAL-CONTAINING THIN FILM, CONTAINING SAME
    Publication number: 20190135840
    Abstract: The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
    Type: Application
    Filed: April 6, 2017
    Publication date: May 9, 2019
    Applicant: DNF Co., Ltd.
    Inventors: Myong Woon KIM, Sang Ick LEE, Won Mook CHAE, Sang Jun YIM, Kang Yong LEE, A Ra CHO, Sang Yong JEON, Haeng Don LIM