Abstract: Provided are an air-cleaning device and method for reducing harmful gas including ethylene and harmful microorganisms, and an air-cleaning system including the air-cleaning device.

Abstract: Provided is a catalytic activity recovery method of a manganese oxide catalyst, an air-cleaning device using the same, air-cleaning system including the air-cleaning device, and an operation method of air-cleaning device by using the manganese oxide catalyst. The catalytic activity recovery method of a manganese oxide catalyst includes recovering the initial activity of a manganese Ni oxide catalyst by heating a manganese oxide catalyst which has been used to decompose ozone and of which activity is thus reduced by 10% or more compared to the initial ozone decomposition efficiency thereof, at the temperature of 80° C. to 250° C.

Abstract: Apparatuses for attaching pellicle may be provided. For example, a pellicle attaching apparatus includes a lower supporter supporting a lower surface of a pellicle, an upper supporter supporting an upper surface of a reticle such that a lower surface of the reticle is in contact with a pellicle frame disposed on an upper surface of the pellicle, and a first sound wave generator disposed on the upper surface of the reticle to irradiate ultrasonic waves onto the upper surface of the reticle.

Abstract: A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Abstract: A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract: A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: A composition for cleaning a phase shift mask, including an organic acid ammonium salt, wherein a base ionization constant (Kb) of organic acid ions is larger than an acid ionization constant (Ka) of ammonium ions, hydrogen peroxide, and water, and associated methods.

Abstract: A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: The mammary gland-specific expression systems developed by the present inventors, named pGbc, pGbc_L and pGbc_S were deposited under the Budapest Treaty on the International Recognition of the Deposit of Microorganisms for the Purpose of Patent Procedure in the Korean Collection for Type Cultures (KCTC), Korean Research Institute of Bioscience and Biotechnology at 52, Oun-dong, Yusong-Ku, Taejon 305–333, Republic of Korea, on Aug. 17, 1998, and the accession deposit Nos. KCTC 0515BP, 0514BP and 0513BP were issued, respectively. All restructions on the availability to the public of the deposited materials will be irrevocably removed upon the granting of a patent.

Abstract: A condensation particle counter measures the number of ultra-fine particles by growing the ultra-fine particles through a condensing process. The counter includes a capillary in which vapor of operating liquid is condensed and the ultra-fine particles grow. An insulating material surrounds the capillary to shut out heat flow between the capillary and the environment. The condensation particle counter can use various operating liquids including alcohol and water, and can be also applied to semiconductor clean rooms.

Abstract: Provided is a condensation particle counter. The condensation particle counter measures the number of ultra-fine particles by growing the ultra-fine particles through a condensing process. The counter comprises a capillary in which vapor of operating liquid is condensed and the ultra-fine particles grow. An insulating material surrounds the capillary to shut out heat flow between the capillary and the environment. The condensation particle counter according to the present invention can use various operating liquids including alcohol and water, and can be also applied to semiconductor clean rooms.

Abstract: There are disclosed mammary gland tissue-specific expression systems using the promoter site for the &bgr;-casein gene of Korean native goats, by use of which physiological activating substances can be produced. In each of the expression systems, that is, novel plasmids pGbc, pGbc_L and pGbc_S (deposition Nos. KCTC 0515BP, 0514BP and 0513BP, respectively), a &bgr;-casein gene expression-regulating region, a physiological activating substance gene and a termination-regulating region are linked. Human granulocyte colony stimulating factor (hG-CSF) or human granulocyte macrophage colony stimulating factor (hGM-CSF) can be produced in HC11 cells, a mouse mammary gland tissue-derived cell line, and in the milk secreted from the transgenic mice by use of a hG-CSF or hGM-CSF gene-carrying pGbc, pGbc_L or pGbc_S in transfection into cell and microinjection to mouse. The proteins are those which experience the posttranslational modification and maintain their normal activity in the human body.

Abstract: There are disclosed mammary gland tissue-specific expression systems using the promoter site for the &bgr;-casein gene of Korean native goats, by use of which physiological activating substances can be produced. In each of the expression systems, that is, novel plasmids pGbc, pGbc_L and pGbc_S (deposition Nos. KCTC 0515BP, 0514BP and 0513BP, respectively), a &bgr;-casein gene expression-regulating region, a physiological activating substance gene and a termination-regulating region are linked. Human granulocyte colony stimulating factor (hG-CSF) or human granulocyte macrophage colony stimulating factor (hGM-CSF) can be produced in HC11 cells, a mouse mammary gland tissue-derived cell line, and in the milk secreted from the transgenic mice by use of a hG-CSF or hGM-CSF gene-carrying pGbc, pGbc_L or pGbc_S in transfection into cell and microinjection to mouse. The proteins are those which experience the posttranslational modification and maintain their normal activity in the human body.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: Disclosed are whitening cosmetics containing extracts from Ecklonia cava. More specifically, Ecklonia cava which has been dried and crushed into powder, is immersed in a solvent, deposited to extract whitening materials, then, the materials are distilled under reduced pressure to obtain extracts from Ecklonia cava, which are added to whitening cosmetics. The whitening cosmetics containing the extracts from Ecklonia cava of the present invention exhibit excellent whitening effect because of strongly inhibiting tyrosinase activity.