Abstract: The invention relates to an organic electron component having a first electrode, a second electrode, a channel layer comprising an organic semiconducting material and a dopant material.

Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Abstract: A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

Abstract: An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

Abstract: Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

Abstract: A process for synthesizing long-chain phosphonic acid derivatives and thiol derivative is disclosed. One embodiment provides organic compounds which can form a self-assembled monolayer and are obtained by reaction of an olefin with a thiocarboxylic acid and subsequent hydrogenation to give the thiol, or with a phosphite and subsequent hydrolysis to give the phosphonic acid.

Abstract: Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.

Abstract: A method for fabricating an organic conductor path on a substrate includes providing a printing stamp with a hydrophobic patterned printing side that is loaded with a printing medium containing an organic conductive polymer and, by bringing it into contact with a hydrophilic substrate, a patterned layer including the organic polymer are formed on the substrate. The method can be operated continuously through selection of suitable geometries for the printing stamp and the substrate.

Abstract: A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

Abstract: An embodiment of the invention provides a method for the treatment of a substrate made of paper or a substrate containing paper as support material for a semiconductor component. In an embodiment, the substrate surface is contacted with a solution comprising at least one phenol-containing base polymer and/or copolymer and a crosslinker component. A polymer formulation deposits from the solution onto the surface. The solution may further include an acid catalyst. Embodiments include a semiconductor component formed according to the method of the invention.

Abstract: An integrated semiconductor memory with a cell array is disclosed. In one embodiment the memory includes a multiplicity of memory cells arranged in rows and columns. In at least one memory cell, an organic selection transistor is integrated in a stack arrangement above an organic storage element.

Abstract: The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

Abstract: A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

Abstract: Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of ?-? interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.

Abstract: A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The laminate is formed by placing a mask onto a packaging film and vapor-depositing aluminum onto the packaging film and the mask. After removal of the mask, only a desired antenna structure remains on a section of the packaging film. Then a microchip, is adhesively bonded to the packaging film and conductively connected to an end of the antenna structure, so that data can be written in or read out without contact in a wireless transponder system.

Abstract: In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains—consisting of conjugated aromatic or heteroaromatic systems—are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective ?-? interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design.

Abstract: A capacitor is formed that includes a self-organized monolayer of an organic compound between two electrodes.

Abstract: A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.