Patents by Inventor Hagen Wilmer
Hagen Wilmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230046318Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R? or NR?2, wherein at least one X is H, n is 1 or 2, and R and R? is an alkyl group, an alkenyl group, an aryl group, or a silyl group.Type: ApplicationFiled: November 16, 2020Publication date: February 16, 2023Inventors: Sinja Verena KLENK, Alexander Georg HUFNNAGEL, Hagen WILMER, Daniel LÖFFLER, Sabine WEIGUNY, Kerstin SCHIERLE-ARNDT, Charles Hartger WINTER, Nilanka WEERATHUNGA SIRIKKATHUGE
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Patent number: 11180852Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.Type: GrantFiled: August 23, 2017Date of Patent: November 23, 2021Assignee: BASF SEInventors: Torben Adermann, Falko Abels, Carolin Limburg, Hagen Wilmer, Jan Gerkens, Sven Schneider
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Patent number: 10801105Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.Type: GrantFiled: November 18, 2016Date of Patent: October 13, 2020Assignee: BASF SEInventors: Torben Adermann, Daniel Loeffler, Carolin Limburg, Falko Abels, Hagen Wilmer, Monica Gill, Matthew Griffiths, Sean Barry
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Patent number: 10787738Abstract: Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol state Ln - - - M - - - Xm??(I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.Type: GrantFiled: January 17, 2017Date of Patent: September 29, 2020Assignee: BASF SEInventors: Falko Abels, Daniel Loeffler, Hagen Wilmer, Robert Wolf, Christian Roedl, Philipp Bueschelberger
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Patent number: 10669297Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.Type: GrantFiled: November 30, 2016Date of Patent: June 2, 2020Assignee: BASF SEInventors: Torben Adermann, Daniel Loeffler, Hagen Wilmer, Kerstin Schierle-Arndt, Jan Gerkens, Christian Volkmann, Sven Schneider
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Publication number: 20200144074Abstract: The present invention is in the field of etching metal- or semimetal-containing materials by atomic layer etching. In particular the present invention relates to a process for etching a metal- or semimetal-containing material comprising bringing a metal- or semimetal-containing material having an activated surface in contact with an organic compound containing a leaving group which is capable of forming a volatile compound upon coming in contact with the metal- or semi-metal-containing material and a group which is capable of coordinating to a metal or semimetal atom in the metal- or semimetal-containing material.Type: ApplicationFiled: April 9, 2018Publication date: May 7, 2020Applicant: BASF SEInventors: Torben ADERMANN, Falko ABELS, Stephan ZUEND, Hagen WILMER
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Publication number: 20190248821Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a ?-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.Type: ApplicationFiled: July 14, 2017Publication date: August 15, 2019Applicant: BASF SEInventors: Carolin LIMBURG, Daniel LOEFFLER, Hagen WILMER, Marc WALTER, Matthias REINERS
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Patent number: 10344381Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.Type: GrantFiled: July 22, 2015Date of Patent: July 9, 2019Assignee: BASF SEInventors: Julia Strautmann, Rocco Paciello, Thomas Schaub, Felix Eickemeyer, Daniel Loeffler, Hagen Wilmer, Udo Radius, Johannes Berthel, Florian Hering
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Publication number: 20190177844Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.Type: ApplicationFiled: August 23, 2017Publication date: June 13, 2019Applicant: BASF SEInventors: Torben ADERMANN, Falko ABELS, Carolin LIMBURG, Hagen WILMER, Jan GERKENS, Sven SCHNEIDER
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Publication number: 20190144999Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a ?-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.Type: ApplicationFiled: April 10, 2017Publication date: May 16, 2019Applicant: BASF SEInventors: Carolin LIMBURG, Daniel LOEFFLER, Hagen WILMER, Marc WALTER, Matthias REINERS
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Publication number: 20190003049Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln . . . M . . . Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.Type: ApplicationFiled: January 17, 2017Publication date: January 3, 2019Applicant: BASF SEInventors: Falko ABELS, Daniel LOEFFLER, Hagen WILMER, Robert WOLF, Christian ROEDL, Philipp BUESCHELBERGER
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Publication number: 20180346501Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R 1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.Type: ApplicationFiled: November 30, 2016Publication date: December 6, 2018Applicant: BASF SEInventors: Torben ADERMANN, Daniel LOEFFLER, Hagen WILMER, Kerstin SCHIERLE-ARNDT, Jan GERKENS, Christian VOLKMANN, Sven SCHNEIDER
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Publication number: 20180320265Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.Type: ApplicationFiled: November 18, 2016Publication date: November 8, 2018Applicant: BASF SEInventors: Torben ADERMANN, Daniel LOEFFLER, Carolin LIMBURG, Falko ABELS, Hagen WILMER, Monica GILL, Matthew GRIFFITHS, Sean BARRY
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Patent number: 10106888Abstract: A process of bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.Type: GrantFiled: July 24, 2015Date of Patent: October 23, 2018Assignee: BASF SEInventors: Julia Strautmann, Rocco Paciello, Thomas Schaub, Kerstin Schierle-Arndt, Daniel Loeffler, Hagen Wilmer, Felix Eickemeyer, Florian Blasberg, Carolin Limburg
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Patent number: 10022714Abstract: The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition containing vanadium, phosphorus and oxygen. The shaped catalyst body has an essentially cylindrical body having a longitudinal axis. The cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.Type: GrantFiled: August 11, 2015Date of Patent: July 17, 2018Assignee: BASF SEInventors: Cornelia Katharina Dobner, Stefan Altwasser, Hagen Wilmer, Frank Rosowski
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Publication number: 20170233865Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.Type: ApplicationFiled: July 24, 2015Publication date: August 17, 2017Applicant: BASF SEInventors: Julia STRAUTMANN, Rocco PACIELLO, Thomas SCHAUB, Kerstin SCHIERLE-ARNDT, Daniel LOEFFLER, Hagen WILMER, Felix EICKEMEYER, Florian BLASBERG, Carolin LIMBURG
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Publication number: 20170175267Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.Type: ApplicationFiled: July 22, 2015Publication date: June 22, 2017Applicant: BASF SEInventors: Julia STRAUTMANN, Rocco PACIELLO, Thomas SCHAUB, Felix EICKEMEYER, Daniel LOEFFLER, Hagen WILMER, Udo RADIUS, Johannes BERTHEL, Florian HERING
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Publication number: 20150343433Abstract: The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition containing vanadium, phosphorus and oxygen. The shaped catalyst body has an essentially cylindrical body having a longitudinal axis. The cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.Type: ApplicationFiled: August 11, 2015Publication date: December 3, 2015Inventors: Cornelia Katharina DOBNER, Stefan ALTWASSER, Hagen WILMER, Frank ROSOWSKI
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Patent number: 9138729Abstract: The invention relates to a catalyst molded body for preparing maleic anhydride by gas-phase oxidation of a hydrocarbon having at least four carbon atoms using a catalytically active composition contains vanadium, phosphorus and oxygen, where the shaped catalyst body has an essentially cylindrical body having a longitudinal axis, wherein the cylindrical body has at least two parallel internal holes which are essentially parallel to the cylinder axis of the body and go right through the body. The catalyst molded body has a large outer surface area, a lower pressure loss and sufficient mechanical stability.Type: GrantFiled: December 21, 2009Date of Patent: September 22, 2015Assignee: BASF SEInventors: Cornelia Katharina Dobner, Stefan Altwasser, Hagen Wilmer, Frank Rosowski
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Patent number: 9067187Abstract: The present invention relates to a process for gas-phase oxidation, in which a gaseous stream comprising an aromatic hydrocarbon and molecular oxygen is passed through two or more catalyst zones. Furthermore, the present invention relates to a catalyst system for gas-phase reaction using a preliminary zone.Type: GrantFiled: August 16, 2012Date of Patent: June 30, 2015Assignee: BASF SEInventors: Hagen Wilmer, Jürgen Zühlke, Thomas Lautensack, Hans-Martin Allmann, Frank Rosowski, Cornelia Dobner