Abstract: A benzazepine spiro derivative as represented by formula (I) and a pharmaceutically acceptable salt thereof, and the use of a compound in the diagnosis, prevention and/or treatment of diseases related to vasopressin receptors.

Abstract: The present invention provides a benzoheterocycle substituted tetrahydroisoquinoline compound, and in particular, relates to a compound shown in formula (I) and a pharmaceutically acceptable salt thereof, and the compound for the treatment of chronic kidney disease.

Abstract: The present invention provides architectures of high-density NOR flash memory consisting of arrays of memory cells (i.e., field effect transistors) with uniquely designed sidewall charge-storage structures to solve the leakage problem typically associated with overerase in traditional NOR flash memory. This feature is particularly useful for applications such as embedded flash memory.

Abstract: The present invention provides architectures of high-density NOR flash memory consisting of arrays of memory cells (i.e., field effect transistors) with uniquely designed sidewall charge-storage structures to solve the leakage problem typically associated with overerase in traditional NOR flash memory. This feature is particularly useful for applications such as embedded flash memory.

Abstract: The present invention provides a design of three-dimensional non-volatile NOR flash memory devices consisting of arrays of basic NOR memory group in which individual memory cells (field-effect-transistors) are stacked along a direction (or directions) either out of or parallel to the plane of the substrate and electrically connected in parallel to achieve high storage densities approaching 1 TB with lower manufacturing cost. Offering full random access to every individual memory cells and also capability of parallel programming/erasing in blocks of memory cells, such three-dimensional non-volatile NOR flash memory can be widely used for both executable-code storage and mass data storage applications.

Abstract: Methods of producing arrays of thin crystal grains of layered semiconductors, including the creation of stable atomic-layer-thick to micron-thick membranes of crystalline semiconductors by chemical vapor deposition.

Abstract: The present invention provides a design of three-dimensional non-volatile ferroelectric random access memory (FeRAM) devices for increasing the storage density. The key components include: (1) FeRAM device structures with (i) field-effect-transistors electrically connected either in series or in parallel as a basic memory group and (ii) a double-gate structure for implementing read/write schemes with full random access to individual memory cells, where one type of gates employs ferroelectrics layers as the gate dielectrics while the other type of gates employs conventional dielectric materials as the gate dielectrics; and (2) FeRAM device structures with stacked ferroelectric-capacitors and field-effect-transistors electrically connected in series as a basic NAND memory group. Example fabrication processes for implementing such three-dimensional FeRAM devices are also provided.

Abstract: The present invention provides a design of three-dimensional non-volatile NOR flash memory devices consisting of arrays of basic NOR memory group in which individual memory cells (field-effect-transistors) are stacked along a direction (or directions) either out of or parallel to the plane of the substrate and electrically connected in parallel to achieve high storage densities approaching 1 TB with lower manufacturing cost. Offering full random access to every individual memory cells and also capability of parallel programming/erasing in blocks of memory cells, such three-dimensional non-volatile NOR flash memory can be widely used for both executable-code storage and mass data storage applications.

Abstract: A graphene nano-sensor with a suspended graphene flake electrically connected to metal electrodes. The graphene nano-sensor is capable of detecting single molecules in an atmosphere through a change in electrical conductance through the graphene flake.

Abstract: Methods of producing arrays of thin crystal grains of layered semiconductors, including the creation of stable atomic-layer-thick to micron-thick membranes of crystalline semiconductors by chemical vapor deposition.

Abstract: A graphene nano-sensor with a suspended graphene flake electrically connected to metal electrodes. The graphene nano-sensor is capable of detecting single molecules in an atmosphere through a change in electrical conductance through the graphene flake.

Abstract: A tunable nanostructure such as a nanotube is used to make an electromechanical oscillator. The mechanically oscillating nanotube can be provided with inertial clamps in the form of metal beads. The metal beads serve to clamp the nanotube so that the fundamental resonance frequency is in the microwave range, i.e., greater than at least 1 GHz, and up to 4 GHz and beyond. An electric current can be run through the nanotube to cause the metal beads to move along the nanotube and changing the length of the intervening nanotube segments. The oscillator can operate at ambient temperature and in air without significant loss of resonance quality. The nanotube is can be fabricated in a semiconductor style process and the device can be provided with source, drain, and gate electrodes, which may be connected to appropriate circuitry for driving and measuring the oscillation. Novel driving and measuring circuits are also disclosed.

Abstract: A carbon nanotube device in accordance with the invention includes a free-standing membrane that is peripherally supported by a support structure. The membrane includes an aperture that extends through a thickness of the membrane. At least one carbon nanotube extends across the aperture on a front surface of the membrane. The carbon nanotube is also accessible from a back surface of the membrane.

Abstract: A carbon nanotube device in accordance with the invention includes a free-standing membrane that is peripherally supported by a support structure. The membrane includes an aperture that extends through a thickness of the membrane. At least one carbon nanotube extends across the aperture on a front surface of the membrane. The carbon nanotube is also accessible from a back surface of the membrane.

Abstract: A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.

Abstract: The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.

Abstract: The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.

Abstract: A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.