Abstract: A time-restricted product sale promotion system includes a promotion platform, at least one seller system, at least one buyer system and a promotion management unit. A time-restricted product sale promotion method includes: providing a time-restricted degressive mechanism on the promotion platform and connecting with a real-time price reporting system to generate a real-time price reference; a seller utilizing the mechanism to calculate optimum degressive sale prices within a restricted promotion time interval and sending the optimum degressive sale prices and the real-time price reference to a buyer; the buyer sending a purchase order to the promotion platform according to the promotion price; comparing the promotion price with the purchase order; displaying a bargain information on the promotion platform if the purchase order is verified.

Abstract: A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.

Abstract: Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a passivation layer are described.

Abstract: A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device including a source electrode, a drain electrode and a channel coupled to the source electrode and the drain electrode. The channel is comprised of a ternary compound containing zinc, tin and oxygen. The semiconductor device further includes a gate electrode configured to permit application of an electric field to the channel.

Abstract: A net structure for use of both sports and leisure is mainly made up of a net body having a plurality of net yarns integrally woven into a large meshwork of coarse and three-dimensional cords wherein within each net hole of the large meshwork is interwoven a small net layer to form a net-within-net fabric structure. The large meshwork is increased in frictional resistance for barring objects caught at the net body therein; the small net layer can gather the outstretched large meshwork thereof, preventing the large meshwork from getting loose easily and permitting the net body thereof to be flexibly expanded within a certain range. The small net layer also forms a protective layer to stop objects like balls from breaking through thereof. Moreover, the net body can be integrally woven by net yarns of two or more than two different colors with the large meshwork in contrast or matching with the small net layer in different colors to verify and increase the beauty of the net body in display.