Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. A memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. An annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. An amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.

Abstract: A radiator combined laterally or stacked vertically by several dissipation pieces including a plurality of dissipation pieces and at least one frame. Wherein two opposite edges of the dissipation pieces bend inwardly, one of the bending edge is formed to provide with bending at two ends and the middle section between which does not provide with bending edge; the frame is of one kind of closed frame structure, or C-shaped structure with one open end, after above-mentioned dissipation pieces are combined, the frame is established around the combined dissipation pieces, thereby the said combined dissipation pieces are fabricated fixedly.

Abstract: A heat sink with an air guide apparatus comprises a plurality of air guides. The air guide is disposed on the surface of heat sink, and the inlet slopes down to the outlet for leading orderly to enhance the cooling performance. The heat sink apparatus could lead effectively the heat and add the touch surface in accordance with the sloping air guide for enhancing the cooling performance.

Abstract: A radiator. The radiator includes heat dissipating pieces secured together in series by a connection device. Each of the heat dissipating pieces includes upper and lower bending edges, and at least one opening. An insert is inserted into the openings of the heat dissipating pieces positioned in a series and secured therein.

Abstract: A radiator combined in series by at least one dissipation pieces, wherein two opposite edges of the said dissipation pieces bend inwardly, one of the bending edges is formed to provide with bending at two ends and the middle section between which does not provide with bending edge, the surfaces of above-mentioned dissipation pieces provide with at least one hole for combination in series to be convenient for the connection in series of similar objects such as insert or bolt, etc. to form the said radiator.

Abstract: A radiator combined laterally or stacked vertically by several dissipation pieces including a plurality of dissipation pieces and at least one frame. Wherein two opposite edges of the dissipation pieces bend inwardly, one of the bending edge is formed to provide with bending at two ends and the middle section between which does not provide with bending edge; the frame is of one kind of closed frame structure, or C-shaped structure with one open end, after above-mentioned dissipation pieces are combined, the frame is established around the combined dissipation pieces, thereby the said combined dissipation pieces are fabricated fixedly.